Process and manufacturing tool architecture for use in the manufacture of one or more metallization levels on an integrated circuit

A manufacturing tool configuration for applying one or more levels of interconnect metallization to a generally planar dielectric surface of a workpiece, the tool configuration comprising:

• a film deposition tool set for depositing a barrier layer exterior to the planar dielectric surface and for depositing a seed layer exterior to the barrier layer;
• a pattern processing tool set for providing an interconnect line pattern over the seed layer and for providing a post pattern over interconnect line metallization formed using the interconnect line pattern;
• a wet processing tool set for performing at least the following wet processing operations,
• applying copper metallization, using an electrochemical deposition process, into the interconnect line pattern and the post pattern formed by the pattern processing tool set,
• removing material applied by the pattern processing tool set to form the interconnect line pattern and the post pattern,
• removing portions of the seed layer and the barrier layer that are not overlied by interconnect line metallization;
• and
• a dielectric processing tool set for depositing a dielectric layer over the interconnect line metallization and post metallization and for etching the deposited dielectric layer to expose upper connection regions of the post metallization;
• a single metallization level comprising the interconnect line metallization, the post metallization, and the dielectric layer being formed using no more than five workpiece movements between the tool sets.

A manufacturing configuration for applying one or more levels of interconnect metallization to a generally planar dielectric surface of a workpiece, the tool configuration comprising:

• first means for depositing a barrier layer exterior to the planar dielectric surface and for depositing a seed layer exterior to the barrier layer;
• second means for providing an interconnect line pattern over the seed layer and for providing a post pattern over interconnect line metallization formed using the interconnect line pattern;
• third means for performing at least the following wet processing operations,
• applying copper metallization, using an electrochemical deposition process, into the interconnect line pattern and the post pattern formed by the second means,
• removing material applied by the second means to form the interconnect line pattern and the post pattern,
• removing portions of the seed layer and the barrier layer that are not overlied by interconnect line metallization;
• and
• fourth means for depositing a dielectric layer over the interconnect line metallization and post metallization and for etching the deposited dielectric layer to expose upper connection regions of the post metallization;
• a single metallization level comprising the interconnect line metallization, the post metallization, and the dielectric layer being formed using no more than ten workpiece movements between the first, second, third, and fourth means.

A manufacturing tool configuration for applying one or more levels of interconnect metallization to a generally planar dielectric surface of a workpiece, the tool configuration comprising:

• a film deposition tool set for depositing a barrier layer exterior to the planar dielectric surface;
• a pattern processing tool set for providing an interconnect line pattern exterior to the barrier layer and for providing a post pattern over interconnect line metallization formed using the interconnect line pattern;
• a wet processing tool set for performing at least the following wet processing operations,
• applying copper metallization, using an electrochemical deposition process, into the interconnect line pattern and the post pattern formed by the pattern processing tool set,
• removing material applied by the pattern processing tool set to form the interconnect line pattern and the post pattern,
• removing portions of the barrier layer that are not overlied by interconnect line metallization;
• and
• a dielectric processing tool set for depositing a dielectric layer over the interconnect line metallization and post metallization and for etching the deposited dielectric layer to expose upper connection regions of the post metallization;
• a single metallization level comprising the interconnect line metallization, the post metallization, and the dielectric layer being formed using no more than ten workpiece movements between the tool sets.

A manufacturing tool configuration for applying one or more levels of interconnect metallization to a generally planar dielectric surface of a workpiece, the tool configuration comprising:

• a film deposition tool set for depositing a barrier layer exterior to the planar dielectric surface and for depositing a seed layer exterior to the barrier layer;
• a pattern processing tool set for providing an interconnect line pattern over the seed layer and for providing a post pattern over interconnect line metallization formed using the interconnect line pattern;
• a wet processing tool set for performing at least the following wet processing operations,
• applying copper metallization, using an electrochemical deposition process, into the interconnect line pattern and the post pattern formed by the pattern processing tool set,
• removing material applied by the pattern processing tool set to form the interconnect line pattern and the post pattern,
• removing portions of the seed layer and the barrier layer that are not overlied by interconnect line metallization;
• and
• a dielectric processing tool set for depositing a dielectric layer over the interconnect line metallization and post metallization and for etching the deposited dielectric layer to expose upper connection regions of the post metallization;
• a single metallization level comprising the interconnect line metallization, the post metallization, and the dielectric layer being formed using a plurality of workpiece movements between the tool sets.