Apparatus and method for generating plasma

#1). Field of the Invention

#The present invention relates generally to cleaning of semiconductor processing chambers and auxiliary equipment such as interconnecting pipes and, more specifically, to an apparatus and a method wherein an ion plasma is generated externally of a semiconductor processing chamber and the ion plasma is then introduced into the semiconductor processing for cleaning purposes.

#2). Discussion of Related Art

#The invention is further described by way of example with reference to the accompanying drawings wherein:

#FIG. 1 is a partially sectioned side view illustrating a system according to the invention;

#FIG. 2 is a partially sectioned perspective view of a plasma generator for use in the system of FIG. 1;

#In the following description, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one skilled in the art that these specific details are not required in order to practice the present invention. Certain specifics regarding apparatus, materials, dimensions, process parameters and results are recited. These and other specifics are recited in order to provide an example of a workable embodiment of the invention, and may be altered according to preference or requirement without departing from the broader scope of the invention.

#The following description relates to an apparatus and a method of cleaning a semiconductor processing chamber. A gas is introduced into a plasma generation chamber and vibrated at radio frequency. Vibration of the gas causes disassociation of the gas into reactive ions. The ions then flow out of the generation chamber through a pipe and into a semiconductor processing chamber. The gas is then allowed to clean the semiconductor processing chamber by reacting with contaminants therein.

#FIG. 1 of the accompanying drawings illustrates a system 110 according to one embodiment of the present invention. The system 110 includes a plasma generator 112, a semiconductor processing chamber 114, a pipe 116 connecting the plasma generator 112 and the semiconductor processing chamber 114 with a shower head portion 118 of the pipe 116 extending into the semiconductor processing chamber 114, and a pump 120 with a low pressure side 122 connected to the semiconductor process chamber 114.