Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate
AssigneeUT-Battelle, LLC
InventorsRodney A. McKee, Frederick J. Walker, Matthew F. Chisholm
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Abstract
A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.
Claims4
In a process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor substrate comprised of germanium and wherein the process includes the steps of depositing an alkaline earth oxide or an alkaline earth-containing perovskite oxide upon the germanium substrate surface in a layer-by-layer build-up and wherein the alkaline earth oxide or alkaline earth-containing perovskite oxide includes an alkaline earth metal, the improvement comprising the steps of:
- passivating the germanium substrate surface against the subsequent reaction with oxygen by forming a monolayer of germanide prior to the initiation of a build-up of a first oxide layer upon the germanium substrate.
Dependencies are inferred from the claim text.