Short-wavelength optoelectronic device including field emission device and its fabricating method

A method of fabricating an optoelectronic device, which includes a junction of an optical device and a field emission device array and emits ultraviolet wavelength and short-wavelength waves, the method comprising the steps of:

• sequentially depositing a superlattice buffer layer, a wave guide layer, a quantum well layer, and a Bragg diffraction superlattice layer on an optoelectronic device substrate;
• sequentially depositing a first insulating layer, a first metal layer, a second insulating layer, and a second metal layer in a laminated form, forming a mask pattern on the second metal layer, sequentially etching the layers from the exposed second metal layer to the substrate, and forming a via hole exposing the surface of the superlattice buffer layer formed on the substrate;
• forming a light reflection layer on the bottom surface of the via hole;
• etching the Bragg diffraction layer, the quantum well layer, and the wave guide layer on the substrate to have a mesa structure, and depositing a cathode metal layer on the mesa structure to prepare an optical device;
• sequentially depositing an insulating layer, a first metal layer, an insulating layer, a second metal layer, a high-voltage insulating layer, and a third metal layer in a laminated form on a field emission device substrate;
• etching the first to third metal layers and insulating layers sequentially from the uppermost laminate by use of a photoresist pattern to form an opening exposing the surface of the field emission device substrate, and forming a grid metal, a first acceleration electrode, and a first focusing electrode on the substrate;
• forming a cathode tip on the exposed substrate to prepare a field emission device array;
• and
• adhesively combining the optical device and the field emission device array being separated at a predetermined distance from each other by support pillars.