High power high impedance microwave devices for power applications
AssigneeAMCOM Communications, Inc.
InventorsAmin Ezzedine, Ho C. Huang
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AssigneeAMCOM Communications, Inc.
InventorsAmin Ezzedine, Ho C. Huang
Estimating the term…
Simplified, efficient multiple-transistor power amplifiers provide high power and high impedance while avoiding the use of RF power divider and combiner circuits. The input signal is directly applied to a first transistor, amplified, and supplied to the succeeding transistor, and so on, for amplification in series. Feedback is provided between the drain of the last transistor and the gates of all the transistors. Series connection of the transistors allows their power outputs and their output impedances to be summed, such that no RF output combiner is required. In a first high voltage embodiment of the amplifier of the invention, e.g., as used for satellite transmission, bias voltage is provided in series. In a second low voltage embodiment, suitable for use in cordless telephones and other battery-powered equipment, bias voltage V.sub.ds is provided separately across the drain and source terminals of each transistor, through paired chokes.
An amplifier for amplifying an input signal, comprising:
A circuit for providing high-power, high-impedance amplification of a RF signal, comprising:
A method for providing high-power, high-impedance amplification of an RF input signal, comprising the steps of:
Dependencies are inferred from the claim text.