Method of fabricating edge type field emission element

A method of fabricating a field emission display, comprising the steps of:

• forming a first insulating layer on a conductive substrate or semiconductor substrate;
• forming a first electrode layer on said first insulating layer;
• forming a second insulating layer on said first electrode layer;
• forming a second electrode layer on said second insulating layer;
• forming an opening in said second electrode layer at a specific position;
• etching said second insulating layer through said opening of said second electrode layer, to form in said second insulating layer a through-hole continuous to said opening of said second electrode layer and wider than said opening;
• and
• anisotropic-etching said first electrode layer through said opening of said second electrode layer and said through-hole of said second insulating layer, to form in said first electrode layer a hole continuous to said through-hole of said second insulating layer and having a planar shape being substantially the same as that of said opening of said second electrode layer.

A method of fabricating a field emission display, comprising the steps of:

• forming a first electrode layer on an insulating substrate;
• forming a first insulating layer on said first electrode layer;
• forming a second electrode layer on said first insulating layer;
• forming a second insulating layer on said second electrode layer;
• forming a third electrode layer on said second insulating layer;
• forming an opening in said third electrode layer at a specific position;
• etching said second insulating layer through said opening of said third electrode layer, to form in said second insulating layer a through-hole continuous to said opening of said third electrode layer and wider than said opening;
• and
• anisotropic-etching said second electrode layer through said opening of said third electrode layer and said through-hole of said second insulating layer, to form in said second electrode layer a hole continuous to said through-hole of said second insulating layer and having a planar shape being substantially the same as that of said opening of said third electrode layer.

A method of fabricating a field emission display, comprising the steps of:

• forming a first electrode layer on an insulating substrate;
• forming a first hole having a specific planar shape in said first electrode layer at a specific position;
• forming an insulating layer on said first electrode layer;
• forming a second electrode layer on said insulating layer;
• forming, in said second electrode layer at a specific position, an opening having a planar shape being partially overlapped to said first hole of said first electrode layer;
• etching said insulating layer through said opening of said second electrode layer, to form in said insulating layer a through-hole continuous to said opening of said second electrode layer and wider than said opening;
• and
• anisotropic-etching said first electrode layer through said opening of said second electrode layer and said through-hole of said insulating layer, to form in said first electrode layer a second hole continuous to said through-hole of said insulating layer and having a planar shape being substantially the same as that of said opening of said second electrode layer.

A method of fabricating a field emission display, comprising the steps of:

• forming a first electrode layer on an insulating substrate;
• forming a first insulating layer on said first electrode layer;
• forming a second electrode layer on said first insulating layer;
• forming, in said second electrode layer at a specific position, a first hole having a specific planar shape;
• forming a second insulating layer on said second electrode layer;
• forming a third electrode layer on said second insulating layer;
• forming, in said third electrode at a specific position, a hole having a planar shape being partially overlapped to said first hole of said second electrode layer;
• etching said second insulating layer through said opening of said third electrode layer, to form in said second insulating layer a through-hole continuous to said opening of said third electrode layer and wider than said opening;
• and
• anisotropic-etching said second electrode layer through said opening of said third electrode layer and said through-hole of said second electrode layer, to form in said second electrode layer a second hole continuous to said through-hole of said second insulating layer and having a planar shape being substantially the same as that of said opening of said third electrode layer.