Method for initiating a retrieval procedure in virtual ground arrays
AssigneeSaifun Semiconductors Ltd.
InventorBoaz Eitan
Life of this patent
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Abstract
A method for detecting the content of a selected memory cell in a memory cell array includes the steps of charging a drain of the selected memory cell to a ground potential, charging a source of the selected memory cell to a predetermined voltage potential, detecting the voltage level on the drain and comparing the detected voltage level with a reference voltage level, thereby producing a comparison result.
Claims12
In a memory cell array including a plurality of memory cells, a method for detecting the content of a selected memory cell, the method comprising the steps of:
- charging a drain of said selected memory cell to a ground potential;
- charging a source of said selected memory cell to a predetermined voltage potential;
- detecting the voltage level on said drain;
- and
- comparing said detected voltage level with a reference voltage level, thereby producing a comparison result.
In a memory cell array including a plurality of memory cells, a method for detecting the content of a selected memory cell, the method comprising the steps of:
- connecting a source and drain of said selected memory cell to a ground potential voltage source;
- disconnecting said source from said ground potential voltage source;
- connecting said source to a voltage source having a predetermined voltage potential;
- disconnecting said drain from said ground potential voltage source;
- detecting the voltage level on said drain;
- and
- comparing said detected voltage level with a reference voltage level, thereby producing a comparison result.
In a memory cell array including a plurality of memory cells having a junction between every two neighboring memory cells and each junction being connected to a bit-line, a method for detecting the content of a selected memory cell, the source of said selected memory cell being connected to a first one of said junctions, the drain end of said selected memory cell being connected to a second one of said junctions, the method comprising the steps of:
- connecting said junctions to a ground potential voltage source, thereby charging said memory cell array to a ground potential voltage potential;
- disconnecting said first one of said junctions from said ground potential voltage source;
- connecting said first one of said junctions to a voltage source, thereby charging said selected memory cell source to a predetermined voltage potential;
- disconnecting said second one of said junctions from said ground potential voltage source;
- detecting the voltage level on said second one of said junctions;
- and
- comparing said detected voltage level with a reference voltage level, thereby producing a comparison result.
In a memory cell array including at least one row, a word line for each row and a plurality of bit-lines, the at least one row including a plurality of memory cells, each of the memory cells including at least a source end and a drain end, said source and drain ends being connected to different ones of the bit-lines, a method for detecting the content of a selected memory cell, the source of said selected memory cell being connected to a first one of the bit-lines, the drain end of said selected memory cell being connected to a second one of the bit-lines, the method comprising the steps of:
- connecting said bit-lines to a ground potential voltage source, thereby charging said memory cell array to a ground potential voltage potential;
- disconnecting said first one of said bit-lines from said ground potential voltage source;
- connecting said first one of said bit-lines to a voltage source, thereby charging said selected memory cell source to a predetermined voltage potential;
- disconnecting said second one of said bit-lines from said ground potential voltage source;
- detecting the voltage level on said second one of said bit-lines;
- and
- comparing said detected voltage level with a reference voltage level, thereby producing a comparison result.
Dependencies are inferred from the claim text.