Back to results
US 6,130,503 AGranted
Electron emission device and display using the same
AssigneePioneer Electronic Corporation
InventorsNobuyasu Negishi, Takamasa Yoshikawa, Takashi Chuman, Kiyohide Ogasawara, Shingo Iwasaki, Hiroshi Ito
Life of this patent
Estimating the term…
Abstract
An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
Claims24
An electron emission device comprising:
- an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and
- a thin-film metal electrode formed on the insulator layer and facing a vacuum space,
- characterized in that said insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode.
2 more elements
An electron emission display device comprising:
- a pair of first and second substrates facing each other with a vacuum space in between;
- a plurality of electron emission devices provided on the first substrate;
- a collector electrode provided in the second substrate;
- and
- a fluorescent layer formed on the collector electrode,
- each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater.
5 more elements
An electron emission display device comprising:
- a pair of a device substrate and a transparent substrate facing each other with a vacuum space in between;
- a plurality of ohmic electrodes formed in parallel on an inner surface of the device substrate;
- a plurality of electron emission devices provided on the ohmic electrodes, each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing the vacuum space, wherein said insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater;
- a plurality of bus electrodes formed on parts of the thin-film metal electrodes and extending in parallel to one another and perpendicular to the ohmic electrodes so as to electrically connect adjoining thin-film metal electrodes;
- a plurality of collector electrodes provided in the transparent substrate;
- and
- fluorescent layers formed on the collector electrodes.
6 more elements
An electron emission device comprising:
- an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and
- a thin-film metal electrode formed on the insulator layer and facing a vacuum space,
- characterized in that said insulator layer is made of a dielectric substance with a dielectric constant of 8 or less and has a film thickness of 50 nm or greater, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode.
2 more elements
An electron emission display device comprising:
- a pair of first and second substrates facing each other with a vacuum space in between;
- a plurality of electron emission devices provided on the first substrate;
- a collector electrode provided in the second substrate;
- and
- a fluorescent layer formed on the collector electrode,
- each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer is made of a dielectric substance with a dielectric constant of 8 or less and has a film thickness of 50 nm or greater.
5 more elements
An electron emission device comprising:
- an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and
- a thin-film metal electrode formed on the insulator layer and facing a vacuum space,
- characterized in that said insulator layer has a film thickness of 50 nm or greater and said electron supply layer is transparent, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode.
2 more elements
An electron emission display device comprising:
- a pair of first and second substrates facing each other with a vacuum space in between;
- a plurality of electron emission devices provided on the first substrate;
- a collector electrode provided in the second substrate;
- and
- a fluorescent layer formed on the collector electrode,
- each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer has a film thickness of 50 nm or greater and said electron supply layer is transparent.
5 more elements
An electron emission device comprising:
- an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and
- a thin-film metal electrode formed on the insulator layer and facing a vacuum space,
- characterized in that said insulator layer is made of silicon oxide as a major component of SiO.sub.x where x represents an atomic ratio in a range of from 0.5 to 2 in a whole layer and has a film thickness of 50 nm or greater, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode.
2 more elements
An electron emission device comprising:
- an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and
- a thin-film metal electrode formed on the insulator layer and facing a vacuum space,
- characterized in that said insulator layer is made of silicon oxide as a major component of SiO.sub.x where x represents an atomic ratio satisfying a refractive index in a range of from 1.3 to 3.0 and has a film thickness of 50 nm or greater, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode.
2 more elements
An electron emission display device comprising:
- a pair of first and second substrates facing each other with a vacuum space in between;
- a plurality of electron emission devices provided on the first substrate;
- a collector electrode provided in the second substrate;
- and
- a fluorescent layer formed on the collector electrode,
- each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer is made of silicon oxide as a major component of SiO.sub.x where x represents an atomic ratio in a range of from 0.5 to 2 in a whole layer and has a film thickness of 50 nm or greater.
5 more elements
An electron emission display device comprising:
- a pair of a device substrate and a transparent substrate facing each other with a vacuum space in between;
- a plurality of ohmic electrodes formed in parallel on an inner surface of the device substrate;
- a plurality of electron emission devices provided on the ohmic electrodes, each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing the vacuum space, wherein said insulator layer is made of silicon oxide as a major component of SiO.sub.x where x represents an atomic ratio in a range of from 0.5 to 2 in a whole layer and has a film thickness of 50 nm or greater;
- a plurality of bus electrodes formed on parts of the thin-film metal electrodes and extending in parallel to one another and perpendicular to the ohmic electrodes so as to electrically connect adjoining thin-film metal electrodes;
- a plurality of collector electrodes provided in the transparent substrate;
- and
- fluorescent layers formed on the collector electrodes.
6 more elements
An electron emission display device comprising:
- a pair of first and second substrates facing each other with a vacuum space in between;
- a plurality of electron emission devices provided on the first substrate;
- a collector electrode provided in the second substrate;
- and
- a fluorescent layer formed on the collector electrode,
- each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein one of said thin-film metal electrode and said insulator layer is provided with a region containing atomic elements each having a work function which is lower than that of said thin-film metal electrode.
5 more elements
An electron emission device comprising:
- an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and
- a thin-film metal electrode formed on the insulator layer and facing a vacuum space,
- characterized in that said insulator layer has a film thickness of 50 nm or greater and is provided with one or more thermal conductive layers, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode.
2 more elements
An electron emission display device comprising:
- a pair of first and second substrates facing each other with a vacuum space in between;
- a plurality of electron emission devices provided on the first substrate;
- a collector electrode provided in the second substrate;
- and
- a fluorescent layer formed on the collector electrode,
- each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer has a film thickness of 50 nm or greater and is provided with one or more thermal conductive layers.
5 more elements
An electron emission device comprising:
- an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and
- a thin-film metal electrode formed on the insulator layer and facing a vacuum space,
- characterized in that said insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater which is formed through a sputtering by using a mixture gas essentially comprising a rare gas under a sputtering condition of a gas pressure of 0.1 to 100 mTorr and a forming rate of 0.5 to 100 nm/min, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode.
2 more elements
An electron emission display device comprising:
- a pair of first and second substrates facing each other with a vacuum space in between;
- a plurality of electron emission devices provided on the first substrate;
- a collector electrode provided in the second substrate;
- and
- a fluorescent layer formed on the collector electrode,
- each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater which is formed through a sputtering by using a mixture gas essentially comprising a rare gas under a sputtering condition of a gas pressure of 0.1 to 100 mTorr and a forming rate of 0.5 to 100 nm/min.
5 more elements
An electron emission display device comprising:
- a pair of a device substrate and a transparent substrate facing each other with a vacuum space in between;
- a plurality of ohmic electrodes formed in parallel on an inner surface of the device substrate;
- a plurality of electron emission devices provided on the ohmic electrodes, each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing the vacuum space, wherein said insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater which is formed through a sputtering by using a mixture gas essentially comprising a rare gas under a sputtering condition of a gas pressure of 0.1 to 100 mTorr and a forming rate of 0.5 to 100 nm/min;
- a plurality of bus electrodes formed on parts of the thin-film metal electrodes and extending in parallel to one another and perpendicular to the ohmic electrodes so as to electrically connect adjoining thin-film metal electrodes;
- a plurality of collector electrodes provided in the transparent substrate;
- and
- fluorescent layers formed on the collector electrodes.
6 more elements
Dependencies are inferred from the claim text.