Acceleration and analysis architecture for ion implanter
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsAnthony Renau, Charles McKenna
Life of this patent
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Abstract
An ion beam generator includes an ion beam source for generating an ion beam, an acceleration/deceleration column for selectably accelerating or decelerating ions in the ion beam to desired energies, a source filter positioned between the ion beam source and the acceleration/deceleration column for removing first undesired species from the ion beam, and a mass analyzer positioned downstream of the acceleration/deceleration column for removing second undesired species from the ion beam. The ion beam generator supplies an energetic ion beam having a low level of energy and mass contaminants. The ion beam generator may be utilized in an ion implanter.
Claims32
An ion beam generator comprising:
- an ion beam source for generating an ion beam;
- an acceleration/deceleration column for selectably accelerating or decelerating ions in aid ion beam to desired energies;
- a source filter positioned between said ion beam source and said acceleration/deceleration column for removing first undesired species from said ion beam;
- and
- a mass resolution mass analyzer positioned downstream of said acceleration/deceleration column for removing second undesired species from said ion beam.
An ion implanter comprising:
- an ion beam generator for generating a beam of energetic ions, said ion beam generator comprising:
- an ion beam source for generating an ion beam;
- an acceleration/deceleration column for selectably accelerating or decelerating ions in said ion beam to desired energies;
- a source filter positioned between said ion beam source and said acceleration/deceleration column for removing first undesired species from said ion beam;
- and
- a mass analyzer positioned downstream of said acceleration/deceleration column for removing second undesired species from said ion beam;
- a scanning assembly for deflecting said beam of energetic ions to form a scanned ion beam;
- and
- an end station for supporting a semiconductor wafer in the path of said scanned ion beam, wherein ions in said scanned ion beam are implanted into said semiconductor wafer.
A method for generating a beam of energetic ions, comprising the steps of:
- generating an ion beam in an ion beam source;
- removing first undesired species from said ion beam with a source filter to provide a filtered ion beam;
- selectably accelerating or decelerating ions in the filtered ion beam to provide an ion beam of desired energy;
- and
- removing second undesired species from the ion beam of desired energy in a mass analyzer to provide said energetic ion beam.
Dependencies are inferred from the claim text.