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US 6,130,160 AGranted
Methods, complexes and system for forming metal-containing films
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims31
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor comprising one or more complexes of the formulas:
- ##STR4## wherein:
- M is a Group IIIA metal,
- each R.sup.1, R.sup.2 , R.sup.3 , R.sup.4 and R.sup.5 group is independently H or a (C.sub.1 -C.sub.30)organic group, wherein optionally R.sup.3 and R.sup.4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems;
- and
- n=1 to 6;
- and
- forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly;
- wherein the metal-containing film is a Group IIIA metal film or a Group IIIA metal alloy film.
7 more elements
The method of claim l wherein each R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 group is independently H or a (C.sub.1 -C.sub.20)organic group.
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor comprising one or more hydride complexes of the formulas:
- ##STR5## wherein:
- M is a Group IIIA metal;
- each R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 group is independently H or a (C.sub.1 -C.sub.30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R.sup.3 and R.sup.4 is H, and R.sup.5 is H;
- and
- n=1 to 6;
- forming a metal containing film from the precursor on a surface of the semiconductor substrate or substrate assembly.
5 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a liquid precursor comprising one or more hydride complexes of the formulas:
- ##STR6## wherein:
- M is a Group IIIA metal;
- each R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 group is independently H or a (C.sub.1 -C.sub.30) organic group, wherein none of the R groups are joined together to form ring systems, at least one of R.sup.3 and R.sup.4 is H, and R.sup.5 is H;
- and
- n=1 to 6;
- vaporizing the liquid precursor to form vaporized precursor;
- and directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing thin on a surface of the semiconductor substrate or substrate assembly.
6 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor comprising one or more complexes of the formulas:
- ##STR7## wherein:
- M is a Group IIIA metal;
- each R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 group is independently H or a (C.sub.1 -C.sub.30)organic group, wherein optionally R.sup.3 and R.sup.4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems;
- and
- n=1 to 6;
- forming a metal-containing film from the precursor on a surface of the substrate;
- wherein the metal-containing film is a Group IIIA metal film on a group IIIA metal alloy film.
6 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor comprising one or more hydride complexes of the formulas:
- ##STR8## wherein:
- M is a Group IIIA metal;
- each R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 group is independently H or a (C.sub.1 -C.sub.30)organic group,
- wherein none of the R groups are joined together to form ring systems, at least one of R.sup.3 and R.sup.4 is H, and R.sup.5 is H;
- and
- n=1 to 6;
- forming a metal-containing film from the precursor on a surface of the substrate.
6 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a liquid precursor comprising one or more hydride complexes of the formulas:
- ##STR9## wherein:
- M is a Group IIIA metal;
- each R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 group is independently H or a (C.sub.1 -C.sub.30) organic group, wherein none of the R groups are joined together to form ring systems, at least one of R.sup.3 and R.sup.4 id H, and R.sup.5 is H;
- and
- n=1 to 6;
- vaporizing the liquid precursor to form vaporized precursor;
- and
- directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
7 more elements
Dependencies are inferred from the claim text.