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US 6,130,010 AGranted
Method for producing a semiconductor dynamic sensor using an anisotropic etching mask
AssigneeDenso Corporation
InventorsSeiichiro Ishio, Kenichi Ao
Life of this patent
Estimating the term…
Abstract
In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the [011] direction of the silicon substrate, and the other side stretches in the [011] direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a non-etched portion corresponding to the main portion of the mask.
Claims39
A composite structure comprising:
- a {100} crystal orientation silicon substrate;
- and
- a mask member disposed on the silicon substrate for preventing a predetermined area of the silicon substrate from being etched in an anisotropic etching process by entirely covering the predetermined area, the mask member comprising:
- a main portion having approximately the same shape as that of the predetermined area of the silicon substrate and having a corner having a right angle, the corner being defined by a first main portion side and a second main portion side;
- and
- a form-compensation portion formed at the corner of the main portion and having a generally rectangular shape with a first form-compensation side, a second form-compensation side longer than the first form-compensation side and perpendicular to the first form-compensation side, and third and fourth form-compensation sides respectively parallel to each of the first and second form-compensation sides and respectively passing through each of the first and second main portion sides;
- wherein one of the first and second form-compensation portion sides is parallel to a <011>
- direction of the silicon substrate.
5 more elements
A mask member, comprising:
- a main portion having approximately the same shape as a plan shape of a structure consequent upon an anisotropic etching process performed on a silicon substrate and having a plurality of right-angled corners, each of the right-angled corners defined by a first main portion side and a second main portion side;
- and
- a plurality of form-compensation portions each formed at a corresponding one of the right-angled corners of the main portion and having a generally rectangular shape with a first form-compensation side, a second form-compensation side longer than the first form-compensation side and perpendicular to the first form-compensation side, and third and fourth form-compensation sides respectively parallel to the first and second form-compensation sides and respectively passing through the first and second main portion sides;
- wherein each of the plurality of the right-angled corners of the main portion has a corresponding one of the plurality of the form-compensation portions formed thereon.
1 more element
A mask member, comprising:
- a main portion having approximately the same shape as a plan shape of a structure consequent upon an anisotropic etching process performed on a silicon substrate, and having a corner having a right angle, the corner being defined by a first main portion side and a second main portion side;
- and
- a form-compensation portion formed at the corner of the main portion and having a generally rectangular shape with a first form-compensation side, a second form-compensation side longer than the first form-compensation side and perpendicular to the first form-compensation side, and third and fourth form-compensation sides respectively parallel to each of the first and second form-compensation sides and respectively perpendicular to each of the first and second main portion sides;
- wherein the mask member has a first axis bisecting the mask member and a second axis bisecting the mask member, the first axis and the second axis being perpendicular to each other, and the mask member being symmetrical about both the first axis and the second axis.
1 more element
A mask member, comprising:
- a main portion for forming an anisotropic etching mask on a silicon substrate, having approximately the same shape as a plan shape of a structure consequent upon an anisotropic etching process performed on the silicon substrate through the anisotropic etching mask, and having corners each having a right angle and a first main portion side and a second main portion side, said first main portion side being longer than said second main portion side;
- and
- form-compensation portions formed at each of the corners of the main portion to protrude from the main portion and having a general rectangular shape with a first form-compensation side, a second form-compensation side longer than the first form-compensation side and perpendicular to the first form-compensation side, and third and fourth form-compensation sides respectively parallel to each of the first and second form-compensation sides and respectively perpendicular to each of the first and second main portion sides;
- wherein each of said second form-compensation sides of said form-compensation portions are parallel with said first main portion side of said main portion.
1 more element
A mask member having a mask pattern which comprises:
- a main masking portion having approximately the same shape as a plan shape of a structure consequent upon an anisotropic etching performed on a {100}-oriented silicon for entirely covering the plan shape of the structure;
- and
- a plurality of form-compensation masking portions respectively disposed to overlap with a plurality of right-angled corners of said main masking portion, the right-angled corners being formed by corresponding sides aligned along <011>-directions of said {100}-oriented silicon;
- wherein:
- each of said form-compensation masking portions has a generally rectangular shape with a first side and a second side longer than said first side and a size, designed in association with an amount of said anisotropic etching of said {100}-oriented silicon, sufficient to retard an occurrence of collision between {111} etched surfaces of said structure during said anisotropic etching, said first side and said second side extending along <011>-direction of said {100}-oriented silicon;
- and
- each of the plurality of form-compensation masking portions is separated from an adjacent one of the plurality of form-compensation masking portions by a side of the main portion interposed therebetween.
4 more elements
Dependencies are inferred from the claim text.