Process for producing dielectrics and fine single crystal powders and thin film capacitor

A process for producing dielectric glass-ceramics which satisfy the formula of:

• wXMO.sub.3 --(l--w) (XO.sub.y --aGO.sub.z),
• which comprises mixing an oxide of X, an oxide of M, an oxide of G or compounds capable of being converted to the above oxides so that a region occupied by each of the oxides or the compounds is smaller than about 0.1 .mu.m in diameter and then, firing or heating the mixture at a temperature of 400-1200.degree. C. at which the crystal phase of XMO.sub.3 can be formed,
• wherein X is at least one element selected from the group consisting of Li, Na, K, Pb, Ba, Mg, Ca, Sr, La, Y and Bi, M is at least one element selected from the group consisting of Al, Mn, Ti, Zr, Sn, Mg, Zn, Fe, Co, Ni, Nb, Ta and W, G is at least one element selected from the group consisting of B, As, Sb, Si, Ge, Te and P, y and z each represent the number of oxygen, and when X is Li, Na and K, y=0.5, , when X is Pb, Ba, Mg, Ca and Sr, y=1, and when X is La, Y and Bi, y=1.5, and when G is B, As and Sb, z=1.5, when G is Si, Ge and Te, z=2 and when G is P, z=2.5, w represents a mol number, a is a real number and 0.3<w.ltoreq.0.95 and 1/19.ltoreq.a.ltoreq.2 with a proviso that when X is only Pb, M is at least one element selected from the group consisting of Zr and Ti, 0.3<w<0.95 and 1/19<a.ltoreq.1, when X is only Ba, M is at least one element selected from the group consisting of Zr, Ti and Sn, 0.4.ltoreq.w.ltoreq.0.95 and 1/19.ltoreq.a.ltoreq.2.