Polishing pads for a semiconductor substrate
AssigneeCabot Corporation
InventorsRoland K. Sevilla, Frank B. Kaufman, Sriram P. Anjur
Life of this patent
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Abstract
A polishing pad for polishing a semiconductor wafer which includes an open-celled, porous substrate having sintered particles of synthetic resin. The porous substrate is a uniform, continuous and tortuous interconnected network of capillary passage. The pores of the porous substrate have an average pore diameter of from about 5 to about 100 microns which enhances pad polishing performance.
Claims18
A polishing pad substrate comprising sintered particles of thermoplastic resin, wherein said polishing pad substrate has an average pore size of from about 5 microns to about 100 microns.
A sintered urethane resin polishing pad substrate having a top surface, a bottom surface including a skin layer, wherein said substrate has a thickness of from 30-125 mils, a density of from 0.60 to 0.95 gm/cc, a pore volume of from 15-70%, and an average pore size of from about 5 microns to about 100 microns and a waviness less than about 100 microns wherein the pad has a tungsten WIWNU less than about 8% and a tungsten polishing rate greater than about 2000 .ANG..
A polishing pad comprising;
- a. a polishing pad substrate further comprising sintered particles of thermoplastic resin, wherein said polishing pad substrate has a top surface having a mean unbuffed surface roughness and a bottom surface including a skin layer having a mean unbuffed surface roughness, wherein the pad top surface mean unbuffed surface roughness is greater than the mean unbuffed surface roughness of the pad bottom surface and wherein the pad has an average pore size of from about 10 microns to about 70 microns and a waviness of less than about 100 microns;
- b. a backing sheet;
- and
- c. an adhesive located between the backing sheet and the bottom surface skin layer.
A polishing pad comprising;
- a. a sintered urethane resin polishing pad substrate having a top surface, a bottom surface including a skin layer, wherein said substrate has a thickness of from 30-125 mils, a density of from 0.60 to 0.95 gm/cc, a pore volume of from 15-70%, a mean top surface roughness of from 1-50 microns, an average pore diameter of from about 10 to about 70 microns, a waviness less than about 35 microns, a mean bottom surface skin layer roughness of less than 20 microns wherein the mean surface roughness of the bottom surface skin layer is less than the mean surface roughness of the top surface, a tungsten WIWNU less than about 5% and a tungsten polishing rate greater than about 2000 .ANG.;
- b. a backing sheet;
- and
- c. an adhesive located between the backing sheet and the bottom surface skin layer.
Dependencies are inferred from the claim text.