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US 6,121,153 AGranted
Semiconductor device having a regrowth crystal region
AssigneeFujitsu Limited
InventorToshihide Kikkawa
Life of this patent
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Abstract
A method of fabricating a compound semiconductor device includes a step of removing a semiconductor layer by an etching process to expose an upper major surface of an underlying semiconductor layer, followed by a growth of another semiconductor layer of the p-type on the surface thus exposed, wherein the exposed surface is cleaned by a flushing of a gaseous metal organic compound containing a group V element for removing impurities therefrom and further doping the exposed surface to the p-type.
Claims7
A method for fabricating a compound semiconductor device, comprising the steps of:
- forming a second compound semiconductor layer of the p-type upon a first compound semiconductor layer;
- removing said second compound semiconductor layer selectively with respect to said first compound semiconductor layer in a region defined on said second compound semiconductor layer, such that a surface of said first compound semiconductor layer is exposed;
- cleaning said exposed surface of said first compound semiconductor layer, said step of cleaning comprising a step of supplying a gaseous metal organic material upon said exposed surface of said first compound semiconductor layer while suppressing growth of a semiconductor layer thereupon;
- and
- growing, after said step of cleaning, a third compound semiconductor layer of the p-type upon said exposed surface of said first compound semiconductor layer,
- wherein said metal organic material contains a group V element,
- said cleaning step being conducted in a state that supply of a group III element is suppressed.
4 more elements
Dependencies are inferred from the claim text.