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US 6,120,640 AGranted
Boron carbide parts and coatings in a plasma reactor
AssigneeApplied Materials, Inc.
InventorsHong Shih, Nianci Han, Steve S. Y. Mak, Gerald Zheyao Yin
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AssigneeApplied Materials, Inc.
InventorsHong Shih, Nianci Han, Steve S. Y. Mak, Gerald Zheyao Yin
Estimating the term…
A plasma etch reactor having interior surfaces facing the plasma composed of boron carbide, preferably principally composed of B.sub.4 C. The boron carbide may be a bulk sintered body or may be a layer of boron carbide coated on a chamber part. The boron carbide coating may be applied by thermal spraying, such as plasma spraying, by chemical vapor deposition, or by other layer forming technique such as a surface converting reaction. The boron carbide is highly resistant to high-density plasma etchants such as BCl.sub.3. The plasma sprayed coating is advantageously applied to only a portion of an anodized aluminum wall. The boron carbide may be sprayed over the exposed portion of the aluminum over which the anodization has been removed. A band of the aluminum substrate at the transition between the anodization and the boron carbide is roughened prior to anodization so that the boron carbide sticks to the correspondingly roughened surface of the anodization. Alternatively, the entire wall area of the anodized aluminum to be coated is roughened, and the boron carbide is sprayed over the anodization.
In a plasma processing reactor for processing a semiconductor-bearing workpiece, a part comprising a substrate of an aluminum-based material including at least 90 wt % elemental aluminum and a surface coating thereover comprising boron carbide.
A plasma processing chamber for processing a semiconductor-bearing workpiece, comprising:
A plasma reaction chamber for processing a semiconductor-bearing substrate, comprising:
A plasma chamber for processing a semiconductor-bearing substrate, comprising:
A plasma processing method, comprising the steps of:
In a plasma reactor adapted for processing a substrate comprising a semiconductor material, a part having a surface portion (a) comprising between 14 to 30 wt % carbon relative to boron and (b) facing a plasma in said reactor.
In a plasma processing reactor for processing a semiconductor-bearing workpiece, a part comprising:
Dependencies are inferred from the claim text.