Gallium nitride-based compound semiconductor laser and method of manufacturing the same

A nitride-based compound semiconductor laser comprising:

• an active layer having a cyclic structure formed by cyclically stacking not less than two types of semiconductor layers;
• first and second cladding layers of first and second conductivity types formed to sandwich said active layer so as to form a double-heterojunction structure;
• first and second electrodes connected to said first and second cladding layers;
• a current blocking layer formed between said second electrode and said second cladding layer and having a striped opening portion for constricting a current for said double-heterojunction structure;
• and
• a current injection layer formed between said second electrode and said current blocking layer and in said opening portion and having an area larger than that of said opening portion,
• wherein each of said first and second cladding layers, said current blocking layer, said current injection layer consists essentially of a material represented by the following composition formula:
• In.sub.x Ga.sub.y Al.sub.z N
• where x+y+z=1, and 0.ltoreq.x, y, z.ltoreq.1, and
• when a thickness of said current blocking layer is represented by TA, and a thickness of said current injection layer excluding a portion in said opening portion is represented by TC, a condition of TC<TA is satisfied.