Polishing method
AssigneeHitachi, Ltd.
InventorsSeiichi Kondo, Yoshio Homma, Noriyuki Sakuma, Kenichi Takeda, Kenji Hinode
Life of this patent
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Abstract
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
Claims50
A polishing method for removing at least part of a metal film, comprising a step of mechanically rubbing a metal film surface using a polishing solution which additionally has included therein less than 1 wt % of a polishing abrasive, said solution having a pH and oxidation-reduction potential in the domain of corrosion of said metal film.
A polishing method for removing at least part of a metal film on an insulating film, comprising a step of mechanically rubbing a metal film surface using a polishing solution comprising less than 1 wt % of a polishing abrasive, an oxidizer and a substance which renders an oxide water-soluble, said solution having a pH and oxidation-reduction potential in the domain of corrosion of said metal film.
A polishing method for removing at least part of a metal film formed on an insulating film, comprising a step of removing said metal film surface by mechanically rubbing said metal film using a polishing solution which additionally has included therein less than 0.5 wt % of a polishing abrasive, and comprising hydrogen peroxide and one of citric acid and malic acid.
A polishing method for removing at least part of a metal film formed on an insulating film, comprising a step of mechanically applying friction to said metal film surface using a polishing solution which additionally has included therein less than 1 wt % of a polishing abrasive, an oxidizer, a substance which renders an oxide water-soluble and an inhibitor, said solution having a pH and oxidation-reduction potential in the domain of corrosion of said metal film.
A polishing method for removing at least part of a metal film formed on an insulating film, comprising a step of rubbing said metal film surface using a polishing solution comprising less than 0.5 wt % of a polishing abrasive, nitric acid and an inhibitor.
A method of manufacturing a semiconductor device, comprising:
- a step of preparing a substrate having an impurity-doped layer,
- a step of forming an insulating film having an opening in said impurity-doped layer,
- a step of forming a metal film on the substrate on which said insulating film is formed,
- a step of removing said metal film so as to expose said insulating film by mechanically rubbing said metal film surface using a polishing solution which additionally has included therein less than 1 wt % of a polishing abrasive, an oxidizer and a substance which renders an oxide water-soluble, said solution having a pH and oxidation-reduction potential in the domain of corrosion of said metal film, followed by:
- a step of cleaning said substrate, and
- a step of drying said cleaned substrate.
A method of manufacturing a semiconductor device, comprising:
- a step of preparing a substrate having a first interconnection layer,
- a step of forming a first insulating film having an opening exposing said first interconnection layer,
- a step of forming a metal film on the substrate on which said insulating film is formed,
- a step of removing said metal film so as to expose said insulating film by mechanically rubbing said metal film surface using a polishing solution which additionally has included therein less than 1 wt % of a polishing abrasive, an oxidizer and a substance which renders an oxide water-soluble, said solution having a pH and oxidation-reduction potential in the domain of corrosion of said metal film, followed by:
- a step of cleaning said substrate, and
- a step of drying said cleaned substrate.
A method of manufacturing a semiconductor device, comprising:
- a step of preparing a substrate having a conducting layer,
- a step of forming a first insulating film having an opening on said conducting layer,
- a step of forming a layered film comprising a metal film having titanium nitride and copper as its principal components on the substrate on which said insulating film is formed,
- a step of mechanically rubbing said layered film using a polishing solution which additionally has included therein less than 0.01 wt % of an alumina polishing abrasive, hydrogen peroxide and one of citric acid and malic acid, followed by:
- a step of cleaning said substrate, and
- a step of drying said cleaned substrate.
A method of manufacturing a semiconductor device, comprising:
- a step of preparing a substrate having a conducting layer,
- a step of forming a first insulating film having a first opening on said conducting layer,
- a step of forming a second insulating film having a groove-shaped opening and a second opening exposing said first opening on said substrate,
- a step of forming a metal film on said substrate on which said second insulating film is formed,
- a step of rubbing said metal film so as to expose said insulating film, using a polishing solution which additionally has included therein less than 1 wt % of a polishing abrasive, an oxidizer and a substance which renders an oxide of said metal water-soluble, said solution having a pH and oxidation-reduction potential in the domain of corrosion of said metal film, followed by:
- a step of cleaning said substrate;
- and
- a step of drying said cleaned substrate.
A method of manufacturing a semiconductor device, comprising:
- a step of preparing a substrate having a first interconnection layer,
- a step of forming a first insulating film having an opening exposing said first interconnection layer,
- a step of forming a metal film on said substrate on which said insulating film is formed,
- a step of removing said metal film surface so as to expose said insulating film by mechanically rubbing said metal film surface using a polishing solution which additionally has included therein less than 1 wt % of a polishing abrasive, an oxidizer, a substance which renders an oxide of said metal water-soluble and an inhibitor which acts on said first interconnection layer, said solution having a pH and oxidation-reduction potential in the domain of corrosion of said metal film, followed by:
- a step of cleaning said substrate, and
- a step of drying said cleaned substrate.
A polishing method for removing at least part of a first metal film formed on an insulating film, which includes a second metal film inside, wherein said first metal film surface is removed by mechanically rubbing said first metal film using a polishing solution comprising an inhibitor which acts on said metal of said second metal film.
A polishing solution for removing at least part of a tungsten film, having a pH and oxidation-reduction potential in the domain of corrosion of the tungsten film, and which comprises benzotriazole or one of its derivatives.
Dependencies are inferred from the claim text.