YBCO epitaxial films deposited on substrate and buffer layer compounds in the system Ca.sub.2 MeSbO.sub.6 where Me=Al, Ga, Sc and In
AssigneeThe United States of America as represented by the Secretary of the Army
InventorsSteven C. Tidrow, Arthur Tauber, William D. Wilber, Robert D. Finnegan
Life of this patent
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Abstract
Compounds of the general formula Ca.sub.2 MeSbO.sub.6 where Me is a 3+ ion selected from the group consisting of aluminum (Al), scandium (Sc), indium (In), gallium (Ga), or a rare earth metal have been prepared and included as the substrate or barrier dielectric in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.
Claims13
A dielectric substrate of the formula Ca.sub.2 AlSbO.sub.6, comprising:
- said dielectric substrate having a dielectric constant of 9.5;
- said dielectric substrate being sintered between 1400.degree. and 1550.degree. C. or 20-60 hours;
- said dielectric substrate having a loss tangent of 6.0.times.10.sup.-3 and being lattice matched to a high critical temperature superconductor film;
- said general formula including an Sb.sup.+5 constituent atom having a polarizability of about 1.18 .ANG..sup.3 ;
- said dielectric substrate providing a cubic perovskite structure;
- and
- said dielectric substrate having a thin film structure.
A dielectric substrate of the formula Ca.sub.2 ScSbO.sub.6, comprising:
- said dielectric substrate having a dielectric constant of 13.3;
- said dielectric substrate having a material density of about 4.80 g/cm.sup.3 ;
- said dielectric substrate being sintered between 1400.degree. and 1550.degree. C. for 20-60 hours;
- said dielectric substrate having a loss tangent of less than 1.0.times.10.sup.-3 and being lattice matched to a high critical temperature superconductor film;
- said general formula including an Sb.sup.+5 constituent atom having a polarizability of about 1.18 .ANG..sup.3 ;
- said dielectric substrate providing a cubic perovskite structure;
- and
- said dielectric substrate having a thin film structure.
A dielectric substrate of the formula Ca.sub.2 InSbO.sub.6, comprising:
- said dielectric substrate having a dielectric constant of 15.0;
- said dielectric substrate having a material density of about 5.16 g/cm.sup.3 ;
- said dielectric substrate being sintered between 1400.degree. and 1550.degree. C. for 20-60 hours;
- said dielectric substrate having a loss tangent of 3.times.10.sup.-3 and being lattice matched to a high critical temperature superconductor film;
- said general formula including an Sb.sup.+5 constituent atom having a polarizability of about 1.18 .ANG..sup.3 ;
- said dielectric substrate providing a cubic perovskite structure;
- and
- said dielectric substrate having a thin film structure.
A dielectric substrate of the formula Ca.sub.2 GaSbO.sub.6, comprising:
- said dielectric substrate having a dielectric constant of 11.1;
- said dielectric substrate having a material density of about 4.55 g/cm.sup.3 ;
- said dielectric substrate being sintered between 1400.degree. and 1550.degree. C. for 20-60 hours;
- said dielectric substrate having a loss tangent of 3.3.times.10.sup.-3 and being lattice matched to a high critical temperature superconductor film;
- said general formula including an Sb.sup.+5 constituent atom having a polarizability of about 1.18 .ANG..sup.3 ;
- said dielectric substrate providing a cubic perovskite structure;
- and
- said dielectric substrate having a thin film structure.
Compounds of the general formula Ca.sub.2 MeSbO.sub.6 where Me is a 3+ ion selected from the group consisting of aluminum (Al), scandium (Sc), indium (In), gallium (Ga), and a rare earth metal in a thin film structure.
A buffer layer of the formula Ca.sub.2 AlSbO.sub.6, comprising:
- said buffer layer being deposited on a substrate;
- said buffer layer having a dielectric constant of 9.5;
- said buffer layer having a material density of about 4.5 1 g/cm.sup.3 ;
- said buffer layer being sintered between 1400.degree. and 1550.degree. C. for 20.times.60 hours;
- said buffer layer having a loss tangent of 6.0.times.10.sup.-3 and being lattice matched to a high critical temperature superconductor film;
- said general formula including an Sb.sup.+5 constituent atom having a polarizability of about 1.18 .ANG..sup.3 ;
- said buffer layer providing a cubic perovskite structure;
- and
- said buffer layer having a thin film structure.
A buffer layer of the formula Ca.sub.2 ScSbO.sub.6, comprising:
- said buffer layer being deposited on a substrate;
- said buffer layer having a dielectric constant of 13.3;
- said buffer layer having a material density of about 4.80 g/cm.sup.3 ;
- said buffer layer being sintered between 1400.degree. and 1550.degree. C. for 20-60 hours;
- said buffer layer having a loss tangent of less than 1.0.times.10.sup.-3 and being lattice matched to a high critical temperature superconductor film;
- said general formula including an Sb.sup.+5 constituent atom having a polarizability of about 1.18 .ANG..sup.3 ;
- said buffer layer providing a cubic perovskite structure;
- and
- said buffer layer having a thin film structure.
A buffer layer of the formula Ca.sub.2 InSbO.sub.6, comprising:
- said buffer layer being deposited on a substrate;
- said buffer layer having a dielectric constant of 15.0;
- said buffer layer having a material density of about 5.16 g/cm.sup.3 ;
- said buffer layer being sintered between 1400.degree. and 1550.degree. C., for 20-60 hours;
- said buffer layer having a loss tangent of 3.times.10.sup.-3 and being lattice matched to a high critical temperature superconductor film,
- said general formula including an Sb.sup.+5 constituent atom having a polarizability of about 1.18 .ANG..sup.3 ;
- said buffer layer providing a cubic perovskite structure;
- and
- said buffer layer having a thin film structure.
A buffer layer of the formula Ca.sub.2 GaSbO.sub.6, comprising:
- said buffer layer being deposited on a substrate;
- said buffer layer having a dielectric constant of 11.1;
- said buffer layer having a material density of about 4.55 g/cm.sup.3 ;
- said buffer layer being sintered between 1400.degree. and 1550.degree. C. for 20-60 hours;
- said buffer layer having a loss tangent of 3.3.times.10.sup.-3 and being lattice matched to a high critical temperature superconductor film;
- said general formula including an Sb.sup.+5 constituent atom having a polarizability of about 1.18 .ANG..sup.3 ;
- said buffer layer providing a cubic perovskite structure;
- and
- said buffer layer having a thin film structure.
Dependencies are inferred from the claim text.