Method to cure mobile ion contamination in semiconductor processing
AssigneeMicron Technology, Inc.
InventorRandhir P. S. Thakur
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Abstract
A first embodiment of the present invention introduces a method to cure mobile ion contamination in a semiconductor device during semiconductor processing by the steps of: forming active field effect transistors in a starting substrate; forming a first insulating layer over the field effect transistor and the field oxide; forming a second insulating layer over the first insulating layer; and performing an annealing step in a nitrogen containing gas ambient prior to exposing the insulating layer to mobile ion impurities. A second embodiment teaches a method to cure mobile ion contamination during semiconductor processing by annealing an insulating layer in a nitrogen containing gas ambient prior to exposing said insulating layer to mobile ion impurities.
Claims43
A method to reduce mobile ion contamination in a semiconductor device during semiconductor processing, said method comprising the steps of:
- forming active field effect transistors in a starting substrate;
- forming a first insulating layer over said field effect transistors;
- forming a second insulating layer over said first insulating layer;
- and
- performing an annealing step in a nitrogen gas ambient and a fluorine based gas prior to exposing said first and second insulating layers to mobile ion impurities.
A method to cure mobile ion contamination during semiconductor processing, said method comprising annealing an insulating layer in a nitrogen gas ambient and a fluorine based gas prior to exposing said insulating layer to mobile ion impurities.
A method of reducing mobile ion contamination of a semiconductor substrate method comprising the steps of:
- forming a dielectric layer over said substrate;
- and
- heating said substrate and dielectric layer in a gas ambient comprising nitrogen and fluorine sufficiently to at least partially anneal said dielectric layer and said substrate.
A method of reducing mobile ion contamination of a semiconductor substrate method comprising the steps of:
- forming a dielectric layer over said substrate;
- and
- annealing said dielectric layer in the presence of a gas comprising fluorine and at least one of nitrogen or oxygen.
Dependencies are inferred from the claim text.