US 6,113,977 A · Method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components

Abstract

The invention relates to a method of growing a ZnS:Mn phosphor layer suitable for use in thin-film electroluminescent components. According to the method, the ZnS:Mn phosphor layer is grown on a substrate by means of the ALE method using volatile zinc, sulfur and manganese compounds as the precursors. According to the invention, an organozinc compound such as diethylzinc or dimethylzinc is used as precursor for zinc, hydrogen sulfide or an organosulfur compound is used as precursor for sulfur, and an organomanganese compound or organic manganese complex compound is used as precursor for manganese. The invention provides a display component with drive-voltage-symmetrical light emission and stable characteristics of luminance level and turn-on voltage.

Claims20

Dependent claims

A method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components, comprising growing the ZnS:Mn phosphor layer on a substrate by an atomic layer epitaxy method using

an organozinc compound as a precursor for zinc selected from the group consisting of simple alkyl compounds, C.sub.1 -C.sub.6 dialkyl compounds, diaryl compounds, di-3-mercaptopropyl zinc, di-4-metoxybutyl zinc and dialkyl zinc compounds forming complex compounds with ethers or amines,
hydrogen sulfide or an organosulfur compound as a precursor for sulfur, and
an organomanganese compound or organic manganese complex compound as a precursor for manganese.

Dependencies are inferred from the claim text.

Method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components

Life of this patent

Method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components

Life of this patent

Abstract

Claims20