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US 6,111,784 AGranted
Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element
AssigneeCanon Kabushiki Kaisha
InventorNaoki Nishimura
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Abstract
It provides a magnetic thin film memory element utilizing the GMR effect. The memory element comprising a first magnetic layer with a closed magnetic circuit structure, a second magnetic layer with a closed magnetic circuit structure having a coercive force higher than that of the first magnetic layer, and a non-magnetic layer disposed between the first and second magnetic layers, at least a part of which is made of an insulating material. It also discloses methods for recording and reproducing information in and from such memory element.
Claims12
A magnetic thin film memory element comprising:
- a first magnetic layer with a closed magnetic circuit structure;
- a second magnetic layer with a closed magnetic circuit structure having a coercive force higher than that of said first magnetic layer;
- and
- a non-magnetic layer disposed between said first and second magnetic layers, at least a part of which is made of an insulating material.
1 more element
Dependencies are inferred from the claim text.