Back to results
US 6,111,782 AGranted
Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHiroshi Sakakima, Yousuke Irie, Mitsuo Satomi, Yasuhiro Kawawake
Life of this patent
Estimating the term…
Abstract
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
Claims20
An amplifying device comprising:
- a magnetoresistive change portion including a first magnetic film, a second magnetic film, and a non-magnetic metal film for separating the first magnetic film from the second magnetic film;
- and
- conductive lines for allowing a signal current to flow therethrough, a magnetic field which is produced by the signal current affecting the magnetoresistive change portion,
- wherein a magnetization curve of the first magnetic film has a good square feature, the first magnetic film having a coercive force incapable of inverting a magnetization of the first magnetic film by the magnetic field produced by the signal current, the second magnetic film having a coercive force capable of inverting a magnetization of the second magnetic film by the magnetic field produced by the signal current.
1 more element
Dependencies are inferred from the claim text.