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US 6,110,829 AGranted
Ultra-low temperature Al fill for sub-0.25 .mu.m generation of ICs using an Al-Ge-Cu alloy
AssigneeAdvanced Micro Devices, Inc.
InventorsPaul Raymond Besser, Robin W. Cheung, Guarionex Morales
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Abstract
An aluminum fill process for sub-0.25 .mu.m technology integrated circuits that has a reflow temperature less than 400.degree. C. that has low alloy resistivity and excellent electromigration characteristics. The aluminum allow is composed of Al-1% Ge-1% Cu.
Claims3
An ultra-low temperature aluminum fill process for sub-0.25 .mu.m technology integrated circuits, the process comprising:
- forming an interlayer dielectric on a surface of a semiconductor substrate in which semiconductor devices have been formed;
- etching at least one trench or via in the interlayer dielectric;
- forming a liner layer on the surface of the semiconductor substrate including side and bottom surfaces of the at least one trench or via;
- and
- forming a layer of an aluminum alloy on the surface of the semiconductor substrate wherein the layer of aluminum alloy fills the at least one trench or via and wherein the aluminum alloy is composed of aluminum, 1% germanium, and 1%.+-.0.1% copper.
2 more elements
Dependencies are inferred from the claim text.