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AssigneeApplied Materials, Inc.
InventorsEdwin C. Weldon, Kenneth S. Collins, Arik Donde, Brian Lue, Dan Maydan, Robert J. Steger, Timothy Dyer, Ananda H. Kumar, Alexander M. Veytser, Kadthala R. Narendrnath, Semyon L. Kats, Arnold Kholodenko, Shamouil Shamouilian, Dennis S. Grimard
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An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.
An electrostatic chuck capable of holding a substrate in a plasma, the electrostatic chuck comprising:
An electrostatic chuck capable of holding a substrate in a plasma environment, the electrostatic chuck comprising:
An electrostatic chuck capable of electrically isolating a gas flow conduit in the electrostatic chuck from a plasma environment, the electrostatic chuck comprising:
An electrostatic chuck capable of holding a substrate in a plasma in a process chamber, the chuck comprising:
An electrostatic chuck capable of holding a substrate in a plasma in a process chamber, the electrostatic chuck comprising:
An electrostatic chuck capable of holding a substrate in a process chamber, the chuck comprising a dielectric covering an electrode, the dielectric having a conduit extending therethrough, and a porous material in the conduit and at least partially within or abutting the dielectric, the porous material having pores that allow passage of gas therethrough.
An electrostatic chuck capable of holding a substrate in a plasma environment, the electrostatic chuck comprising:
A method of forming an electrostatic chuck capable of holding a substrate in a plasma, the method comprising the steps of:
An electrostatic chuck capable of holding a substrate in a plasma process chamber, the electrostatic chuck comprising:
An electrostatic chuck capable of holding a substrate in a plasma, the electrostatic chuck comprising:
An electrostatic chuck capable of holding a substrate in a plasma, the chuck comprising:
An electrostatic chuck capable of holding a substrate in a plasma, the electrostatic chuck comprising:
An electrostatic chuck capable of holding a substrate in a plasma, the chuck comprising:
A method of forming an electrostatic chuck, the method comprising the steps of:
Dependencies are inferred from the claim text.