Method for improving the morphology of refractory metal thin films
AssigneeInternational Business Machines Corporation
InventorsRussell D. Allen, F. Read McFeely, Cevdet I. Noyan, John J. Yurkas
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Abstract
A method of producing a smooth surface for a film of refractory metallic material is realized by placing a substrate in a CVD reactor; initiating deposition of a layer of two phase material via concurrent introduction into the CVD reactor of a precursor gas and molecular oxygen, the latter at a pressure between about 1.times.10.sup.-6 and 1.times.10.sup.-4 ; and annealing the treated layer at the deposition temperature.
Claims14
A method of producing a smooth surface for a film of refractory metallic material comprising:
- placing a substrate in a CVD reactor;
- initiating deposition of a layer of two phase material via concurrent introduction into said CVD reactor of a precursor gas and molecular oxygen, the latter at a pressure between about 1.times.10.sup.-6 and 1.times.10.sup.-4 Torr;
- annealing said layer at a temperature less than or equal to the deposition temperature, to transform said two phase material to a single phase to produce a film with substantially reduced surface roughness and altered grain structure.
A method of producing a smooth surface for a film of refractory metallic material comprising:
- sputtering a refractory metal onto a substrate via the introduction of molecular oxygen at a pressure of between about 1.times.10.sup.-6 and 1.times.10.sup.-4 Torr to obtain a two-phase surface of refractory metal on said substrate;
- annealing said layer at temperature in the range of 80.degree. C. or above, to transform said two phase material to a single phase to produce a film with substantially reduced surface roughness and altered grain structure.
Dependencies are inferred from the claim text.