Methods for providing void-free layers for semiconductor assemblies
AssigneeTessera, Inc.
InventorsThomas H. Distefano, Joseph Fjelstad
Life of this patent
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Abstract
A method for the removal of voids and gas bubbles within uncured or partially cured microelectronic component enapsulants and adhesive/chip attach layers. A sealed void or gas bubble within a gap between a microelectronic component and a supporting substrate is substantially eliminated through the application of a uniform pressure (isostatic or hydrostatic) and energy such that a substantially void/bubble free interposer is created.
Claims91
A method of providing a substantially void free underfill for a semiconductor wafer having a plurality of flip chip assemblies, comprising the steps of:
- electrically connecting a plurality of contact pads on a surface of a semiconductor wafer associated with a plurality of semiconductor chips to corresponding bond pads on a circuitized substrate such that the connections create a gap between the chips and the substrate;
- sealing the gap between the chips and the substrate with a fluid, curable encapsulant so that there is a void therebetween;
- while maintaining the seal, applying uniform pressure to the assembly causing the encapsulant to flow into the gap and around the connections;
- and
- applying energy to the assembly in order to cure the encapsulant.
A method of injecting an encapsulant between a face surface of a semiconductor wafer having a plurality of semiconductor chips and a juxtaposed substrate, comprising the steps of:
- providing a gap between the face surface of the wafer and the substrate;
- sealing the edge of the gap with a curable fluid encapsulant so that there is a void between the chips on said wafer and the substrate;
- while maintaining the seal, applying uniform pressure to the assembly causing the encapsulant to flow between the chips and the substrate;
- and
- applying energy to the assembly in order to cure the encapsulant.
A method of treating an interposer layer for a semiconductor wafer assembly to provide a substantially void free interposer layer, comprising the steps of:
- disposing a sheet-like, compliant interposer layer between a face surface of a semiconductor wafer having a plurality of semiconductor chips and a first surface of a substrate such that any voids within or at the boundaries of the interposer are sealed within the assembly;
- while maintaining the seal, applying uniform pressure to the assembly wherein any voids in the interposer layer are substantially eliminated.
A method of creating a substantially void-free interposer layer for a semiconductor wafer having a plurality of microelectronic components, comprising the steps of:
- injecting an interposer layer into a gap between the microelectronic components and a sheet-like substrate such that any voids within or at the boundaries of the interposer are sealed within the gap;
- while maintaining the seal, applying uniform pressure to the wafer assembly wherein any voids in the interposer layer are substantially eliminated.
Dependencies are inferred from the claim text.