Method of making an organic thin film transistor
AssigneeLucent Technologies Inc.
InventorsZhenan Bao, Ananth Dodabalapur, Yi Feng, Venkataram Reddy Raju
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Abstract
A process for fabricating thin film transistors in which the active layer is an organic semiconducting material with a carrier mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity less than about 10.sup.-6 S/cm at 20.degree. C. is disclosed. The organic semiconducting material is a regioregular (3-alkylthiophene) polymer. The organic semiconducting films are formed by applying a solution of the regioregular polymer and a solvent over the substrate. The poly (3-alkylthiophene) films have a preferred orientation in which the thiophene chains has a planar stacking so the polymer backbone is generally parallel to the substrate surface.
Claims16
A process for fabricating organic thin film transistors (TFTs), comprising the steps of:
- forming a gate electrode on a substrate;
- printing a layer of insulating material over the substrate wherein the layer of insulating material is selected from the group consisting of polyimide, polyester, and polymethylmethacrylate (PMMA);
- applying a solution of an organic material combined with a solvent therefore over the layer of insulating material and forming an active layer of organic material, wherein the active layer of organic material has a mobility greater than about 10.sup.3 cm.sup.2 /Vs;
- and
- forming a source electrode and a drain electrode in contact with the active layer of organic material layer.
A process for fabricating organic thin film transistors (TFTs), comprising the steps of:
- forming a gate electrode on a substrate;
- printing a layer of insulating material over the substrate;
- printing a solution of an organic material combined with a solvent therefor over the layer of insulating material and forming an active layer of organic material, wherein the active layer of organic material has a mobility greater then about 10.sup.-3 cm.sup.-2 /Vs;
- and
- forming a source electrode and a drain electrode in contact with the active layer of organic material.
A process for fabricating organic thin film transistors (TFTs), comprising the steps of:
- forming a gate electrode on a substrate;
- forming a layer of insulating material over the substrate;
- applying a solution of regioregular poly(3-alkylthiophene) combined with a solvent therefore over the layer of insulating material and forming an active layer of regioregular poly(3-alkylthiophene), wherein the active layer of regioregular poly(3-alkylthiophene) has a mobility greater than about 10.sup.-3 cm.sup.2 /Vs;
- and
- forming a source electrode and a drain electrode in contact with the active layer of regioregular poly(3-alkylthiophene).
Dependencies are inferred from the claim text.