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AssigneeCanon Kabushiki Kaisha
InventorJinsho Matsuyama
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A process for forming a zinc oxide film including immersing an electroconductive substrate having a surface including a plurality of linear projections in an aqueous solution containing at least nitrate ions and zinc ions to form a zinc oxide film on the electroconductive substrate by a liquid-phase deposition. The plurality of linear projections may preferably provide an uneven surface which has a center-line average surface roughness Ra(X) of 15-300 nm when scanned in a direction parallel to the linear projections, a center line average surface roughness Ra(Y) of 20-600 nm when scanned in a direction perpendicular to the linear projections, and an Ra(X)/Ra(Y) ratio of at most 0.8. The thus formed zinc oxide film is provided with an uneven surface suitable for an optical-confinement layer of a photo-electricity generating device excellent in photoelectric performances.
A process for forming a zinc oxide film, comprising:
A process for producing a substrate, for a semiconductor device, comprising an electroconductive substrate and a zinc oxide film formed thereon, said process comprising:
A process for producing a photo-electricity generating device, comprising:
Dependencies are inferred from the claim text.