Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices

A magnetic memory, comprising:

• first and second crossing conductive lines forming an intersecting region;
• and
• a magnetic memory cell disposed at said intersecting region and having a magnetic axis along which two directions of magnetization can be imposed thereby providing two respective states into which the cell is changeable according to magnetic stimuli applied thereto via the first and second crossing conductive lines, the cell disposed in said intersecting region such that said magnetic axis is non-parallel to either said first or said second crossing conductive line.

In a magnetic memory having a magnetic memory cell therein which includes a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cell is changeable according to magnetic stimuli applied thereto, a method for changing the changeable magnetic region between the two directions of magnetization, comprising:

• applying the magnetic stimuli to the changeable region in a direction non-parallel to the magnetic axis.

In a magnetic memory having a magnetic memory cell therein which includes a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cell is changeable according to magnetic stimuli applied thereto, a method for changing the changeable magnetic region between the two directions of magnetization, comprising:

• applying the magnetic stimuli to the changeable region, including using first and second magnetic stimuli from respective first and second lines crossing proximate said cell, said direction of the magnetic stimuli attained according to respectively varying amplitudes and/or timing of the first and second magnetic stimuli.