Clathrate structure for electronic and electro-optic applications
AssigneeUniversity of Kentucky Research Foundation Intellectual Property Development
InventorsLeonid Grigorian, Peter Eklund, Shaoli Fang
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Abstract
A method including the steps of (a) depositing a metal layer on a selected portion of a silicon substrate under a first set of predetermined conditions to form an metal silicide layer and an intermediate n-type silicon layer; and (b) exposing the metal silicide layer and the n-type silicon layer to a second set of predetermined conditions to form a silicon clathrate film on the selected portion of the silicon substrate, where the intermediate n-type silicon layer acts to bond the silicon clathrate to the silicon substrate to form a silicon clathrate structure.
Claims5
A silicon clathrate structure, comprising:
- a silicon substrate;
- a silicon clathrate film on a selected portion of said silicon substrate;
- and
- an intermediate n-type silicon layer, bonding said silicon clathrate to said silicon substrate.
Dependencies are inferred from the claim text.