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US 6,103,086 AGranted
Method of forming reliable copper interconnects with improved hole filling
AssigneeAdvanced Micro Devices, Inc.
InventorsChristy Woo, Axel Preusse, Sergey Lopatin
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Abstract
The reliability of Cu and Cu alloy interconnects is significantly enhanced by controlling the temperature of the electroplating solution during via opening filling to substantially prevent occlusion of the opening. Embodiments of the present invention include electroplating Cu or a Cu alloy from an electroplating solution at a temperature of about 20.degree. C. or less.
Claims14
A method of manufacturing a semiconductor device, the method comprising:
- forming an opening in a dielectric layer;
- electroplating a copper (Cu) or Cu alloy layer in the opening and over the dielectric layer from an electroplating solution;
- and
- controlling the temperature of the electroplating solution at about 20.degree. C. or less during electroplating to substantially prevent occlusion of the opening.
1 more element
A method of manufacturing a semiconductor device, the method comprising:
- forming an opening in a dielectric layer;
- electroplating a copper (Cu) or Cu alloy layer in the opening and over the dielectric layer from an electroplating solution;
- and
- controlling the temperature of the electroplating solution at about 20.degree. C. or less to substantially prevent the formation of voids in the opening during filling.
1 more element
Dependencies are inferred from the claim text.