Ion implantation control using charge collection, optical emission spectroscopy and mass analysis

An ion implantation system for causing ions to impact an implantation surface comprising:

• a) a process chamber defining a chamber interior into which one or more workpieces can be inserted for ion treatment;
• b) an energy source for setting up an ion plasma within the process chamber;
• c) an optical sensor for monitoring the ion plasma and for providing optical data;
• d) a data store correlating optical analysis obtained from the optical sensor to constituency of the ion plasma;
• e) a workpiece support for positioning one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma;
• f) a conducting member which generates an electric field that causes ions from the ion plasma to strike the implantation surface of the workpiece;
• g) a pulse generator in electrical communication with the conducting member for applying electrical pulses to drive ions into the implantation surface of the workpiece;
• h) one or more electrically biased dosimetry cups including an ion collecting surface parallel to the implantation surface biased to prevent ions from drifting into the dosimetry cup during the time between the electrical pulses;
• and
• i) a computation means for calculating the ion dose profile of the workpiece from dosimetry cup data.