Liquid crystal display with planarizing organic gate insulator and organic planarization layer and method for manufacturing

A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of:

• providing a substrate;
• forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;
• forming a first inorganic layer between the gate insulation layer and the semiconductor layer;
• forming a protection film over the transistor;
• forming a second inorganic layer over the protection film;
• and
• forming a pixel electrode over the second inorganic layer, the pixel electrode being connected to one of the source and the drain.

A transistor substrate for a liquid crystal display comprising:

• a substrate;
• a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;
• a protection film over the transistor, the protection film having a contact hole and including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;
• a gate bus line connected to the gate of the transistor;
• a signal bus line connected to one of the source and the drain of the transistor;
• and
• a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and the drain of the transistor through the contact hole,
• wherein at least one of the gate bus line and signal bus line is located under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.

A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of:

• forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;
• forming a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;
• forming a gate bus line connected to the gate of the transistor;
• forming a signal bus line connected to one of the source and the drain of the transistor;
• and
• forming a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and the drain of the transistor,
• wherein at least one of the gate bus line and signal bus line is formed under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.

A transistor substrate for a liquid crystal display, comprising:

• a substrate;
• a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;
• a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;
• a first inorganic layer between the protection film and the transistor;
• a second inorganic layer between the gate insulation layer and the semiconductor layer;
• a third inorganic layer over the protection film;
• and
• a pixel electrode over the third inorganic layer, the pixel electrode being connected to one of the source and the drain.

A transistor substrate for a liquid crystal display, comprising:

• a substrate;
• a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, the gate insulation layer including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB, the transistor further including a first inorganic layer between the gate insulation layer and the semiconductor layer;
• a protection film over the transistor;
• a second inorganic layer over the protection film;
• and
• a pixel electrode over the second inorganic layer, the pixel electrode being connected to one of the source and the drain.

A transistor substrate for a liquid crystal display comprising:

• a substrate;
• a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes an organic insulation material;
• a protection film over the transistor, the protection film having a contact hole and including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;
• a gate bus line connected to the gate of the transistor;
• a signal bus line connected to one of the source and the drain of the transistor;
• and
• a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and drain of the transistor through the contact hole,
• wherein at least one of the gate bus line and signal bus line is located under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.

A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of:

• forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes an organic insulation material;
• forming a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;
• forming a gate bus line connected to the gate of the transistor;
• forming a signal bus line connected to one of the source and the drain of the transistor;
• and
• forming a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and the drain of the transistor,
• wherein at least one of the gate bus line and signal bus line is formed under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.