Semiconductor device and method of manufacturing the same

A semiconductor device including a stacked package structure and a chip size package structure, comprising:

• an insulating substrate including a wiring layer having electrode sections;
• a first semiconductor chip having an insulating paste applied to its back surface where a circuit is not formed, said first semiconductor chip being mounted on said wiring layer through said first insulating adhesion layer;
• and
• a second semiconductor chip having a second insulating adhesion layer adhered to its back surface where a circuit is not formed, said second semiconductor chip being mounted on a circuit-formed front surface of said first semiconductor chip through the second insulating adhesion layer;
• each of said first and second semiconductor chips being wire-bonded to the electrode section with a wire, said first and second semiconductor chips and the wire being sealed with a resin.

A semiconductor device comprising:

• an insulating substrate including a wiring layer having electrode sections;
• a first semiconductor chip having a circuit formed on its front surface and an insulating adhesion layer adhered to its back surface;
• a metal bump, disposed between said first semiconductor chip and said wiring layer, for bumpbonding the front surface of said first semiconductor chip to said wiring layer so that the front surface faces said wiring layer;
• and
• a second semiconductor chip whose back surface where a circuit is not formed is mounted on the back surface of said first semiconductor chip through the insulating adhesion layer;
• said second semiconductor chip being wire-bonded to the electrode section of said wiring layer with a wire, said first and second semiconductor chips and the wire being sealed with a resin.

A semiconductor device comprising:

• an insulating substrate including a wiring layer on its surface and a packaging-use external terminal on its back surface, the wiring layer having an electrode section, the packaging-use external terminal being electrically connected to said wiring layer through a via hole;
• a first semiconductor chip produced by forming a first insulating adhesion layer on a back surface of a wafer having a desired circuit formed on its front surface and by dicing the wafer, said first semiconductor chip being mounted on said insulating substrate through the first insulating adhesion layer;
• and
• a second semiconductor chip produced by forming a second insulating adhesion layer on a back surface of a wafer having a circuit formed on its front surface and by dicing the wafer, said second semiconductor chip being mounted on a circuit-formed surface of said first semiconductor chip through the second insulating adhesion layer;
• said first and second semiconductor chips being connected to the electrode section of the wiring layer with a wire,
• said first and second semiconductor chips and the wire being sealed with a resin.

A semiconductor device comprising:

• an insulating substrate including a wiring layer on its front surface and a packaging-use external terminal on its back surface, the wiring layer having an electrode section, the packaging-use external terminal being electrically connected to said wiring layer through a via hole;
• a first semiconductor chip having a desired circuit formed on its front surface, said first semiconductor chip being mounted through an insulating paste;
• and
• a second semiconductor chip produced by forming a second insulating adhesion layer on a back surface of a wafer having a desired circuit formed on its front surface and by dicing the wafer, said second semiconductor chip being mounted on a circuit-formed surface of said first semiconductor chip through the second insulating adhesion layer;
• said first and second semiconductor chips being connected to the electrode section of the wiring layer with a wire,
• said first and second semiconductor chips and the wire being sealed with a resin.

A semiconductor device comprising:

• a first semiconductor chip;
• an insulating substrate including on its front surface a wiring layer having an electrode section;
• an insulating layer disposed in an area where said first semiconductor chip is to be mounted, except for a part to be connected to said first semiconductor chip;
• and a metal bump for making electrical connection to said first semiconductor chip, said insulating substrate including on its back surface a packaging-use external terminal electrically connected to said wiring layer through a via hole, said first semiconductor chip being mounted on the front surface of said insulating substrate by face-down bonding through said metal bump;
• and
• a second semiconductor chip produced by forming a first insulating adhesion layer on a back surface of a wafer having a desired circuit formed on its front surface and by dicing the wafer, said second semiconductor chip being mounted on a surface of said first semiconductor chip on which surface a circuit is not formed, through the first insulating adhesion layer;
• said second semiconductor chip being connected to the electrode section of the wiring layer with a wire,
• said first and second semiconductor chips and the wire being sealed with a resin.