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US 6,100,166 AGranted
Process for producing semiconductor article
AssigneeCanon Kabushiki Kaisha
InventorsKiyofumi Sakaguchi, Takao Yonehara, Shoji Nishida, Kenji Yamagata
Life of this patent
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Abstract
A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.
Claims78
A process for producing a semiconductor article comprising the steps of:
- bonding a flexible film onto a porous semiconductor layer on a surface of a substrate;
- and
- applying a force to the flexible film in a peeling direction so as to separate the porous semiconductor layer from the substrate;
- whereby the porous semiconductor layer is transferred onto the flexible film.
1 more element
A process for producing a semiconductor article comprising the steps of:
- bonding a flexible film onto a nonporous semiconductor layer on a porous semiconductor layer of a first substrate;
- and
- applying a force to the flexible film in a peeling direction so as to separate the nonporous semiconductor layer from the first substrate at the porous semiconductor layer;
- whereby the nonporous semiconductor layer is transferred onto the flexible film.
1 more element
A process for producing a semiconductor article comprising the steps of:
- bonding a flexible film onto a nonporous semiconductor layer on a porous semiconductor layer of a first substrate;
- applying a force to the flexible film in a peeling direction, so that the nonporous semiconductor layer is separated from the first substrate at the porous semiconductor layer;
- and
- bonding the separated nonporous semiconductor layer on to a second substrate;
- whereby the nonporous semiconductor layer is transferred onto the second substrate.
2 more elements
A process for producing a semiconductor article comprising the steps of:
- implanting ions of rare gas, hydrogen or nitrogen into a semiconductor substrate so as to form an implanted layer beneath a nonporous surface of the semiconductor substrate so that the nonporous surface of the semiconductor substrate becomes a nonporous semiconductor layer;
- bonding a flexible film onto the nonporous surface of the semiconductor substrate;
- and
- applying a force to the flexible film in a peeling direction so as to separate the nonporous semiconductor layer from the substrate at the implanted layer;
- whereby the nonporous semiconductor layer is transferred onto the flexible film.
2 more elements
Dependencies are inferred from the claim text.