Method of manufacturing a semiconductor device and a process of manufacturing a thin film transistor

A process of manufacturing a thin film transistor, comprising:

• a process for forming a gate electrode in a part on a substrate;
• a process for forming an insulating film on said substrate and said gate electrode;
• a process for forming a lift-off film in an area corresponding to said gate electrode on said insulating film;
• a process for forming a first semiconductor film with a uniform thickness on said lift-off film and said insulating film;
• a process for removing said lift-off film and said first semiconductor film on said lift-off film;
• a process for forming a second semiconductor film on a residual area of said first semiconductor film and said insulating film;
• a process for crystallizing said first and second semiconductor films by radiating an energy beam;
• and
• a process for forming source and drain electrodes in a particular position on said first and second semiconductor films.

A method of manufacturing a semiconductor device, comprising:

• a process for selectively forming a metallic film on a substrate;
• a process for forming an insulating film on said substrate;
• a process for forming a semiconductor film on said insulating film;
• and
• a process for crystallizing said semiconductor film by radiating an energy beam on said semiconductor film, wherein:
• the thickness of said semiconductor film in an area over said metallic film and that in an area in which said metallic film is not formed are selected so that the maximum temperature in the respective areas when said energy beam is radiated is substantially equal.