Method and a device for epitaxial growth of objects by chemical vapor deposition
AssigneeABB Research Ltd.
InventorsPeter Lofgren, Chun Yuan Gu, Christer Hallin, Yujing Liu
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Abstract
A device for epitaxial growth of objects by Chemical Vapor Deposition on a substrate comprises a susceptor adapted to receive the substrate and members for heating walls of the susceptor surrounding the substrate and thereby the substrate and a gas mixture fed to the substrate for the growth. The device comprises also members for holding the substrate in the path of the gas mixture through the susceptor at a distance from internal walls thereof.
Claims20
A device for epitaxial growth of objects by Chemical Vapor Deposition on a substrate comprising a susceptor adapted to receive said substrate, means for heating walls of the susceptor surrounding the substrate and thereby the substrate and a gas mixture fed to the substrate for the growth, and means for holding the substrate in the path of said gas mixture flow through the susceptor, said holding means placing said substrate at a distance from internal walls of the susceptor so that there is a gas space between the substrate and the internal walls, and wherein the growth surface of the substrate extends substantially in the direction of the gas mixture flow.
A device for epitaxial growth of objects by Chemical Vapor Deposition on a substrate comprising a susceptor adapted to receive said substrate, means for heating walls of the susceptor surrounding the substrate and thereby the substrate and a gas mixture fed to the substrate for the growth, and means for holding the substrate in the path of said gas mixture flow through the susceptor at said means placing said substrate a distance from internal walls of the susceptor so that there is a space between the substrate and the internal walls, wherein the growth surface of the substrate extends substantially in the direction of the gas mixture flow and wherein said susceptor is substantially completely open on the inlet side thereof.
Dependencies are inferred from the claim text.