Semiconductor device, and manufacturing method of the same

Abstract

To provide a highly reliable semiconductor device which does not suffer from a crack in its package, a semiconductor chip 12 is mounted on a lead frame 11 with a bonding layer 13 between them, and they are sealed with a sealing resin 14. The lead frame 11 has a base member 11a essentially consisting of Cu and an oxide film 11b essentially consisting of an oxide of the base member 11a formed on the base member and having a thickness of about 50 nm or below. By controlling the oxide film 11b to a thickness of about 50 nm or below, an adhesion strength with the sealing resin 14 is improved greatly, so that a package crack does not occur even if a large thermal load is applied in a reflow process for mounting.

Dependencies are inferred from the claim text.