US 6,084,302 AGranted

Barrier layer cladding around copper interconnect lines

AssigneeMicron Technologies, Inc.

InventorGurtej Singh Sandhu

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Abstract

In a method for fabricating an integrated circuit interconnect upon a semiconductor substrate an integrated circuit component is formed upon the surface of the semiconductor substrate. A copper interconnect is formed and electrically coupled to the integrated circuit component. A metal is introduced in the copper interconnect to provide an introduced metal. A gas is reacted with the implanted metal to form a barrier layer cladding upon the copper interconnect. The metal is introduced substantially near the surface of the copper interconnect and substantially all of the introduced metal diffuses to the surface and reacts with the gas. Thus the resistivity of the introduced interconnect is substantially equal to the resistivity of copper. The metal can be, for example, titanium, tantalum, chromium, aluminium or tungsten. The gas can contain, for example, nitrogen, oxygen and carbon.

Claims12

Dependent claims

A semiconductor integrated circuit formed upon a semiconductor substrate, comprising:

an integrated circuit component formed upon a surface of said semiconductor substrate;
a copper interconnect having a bottommost surface electrically coupled to said integrated circuit component, an uppermost surface at an end opposing the bottommost surface, a left side surface which extends along one edge of said copper interconnect between the bottommost surface and the uppermost surface, and a right side surface which extends along an edge opposite the left side surface between the bottommost surface and the uppermost surface;
and
an ion-implanted metal barrier layer cladding which, at formation, is driven only into the uppermost surface, the left side surface, and the right side surface of said copper interconnect, and which ion-implanted metal is annealled out of said copper interconnect after formation, wherein said ion-implanted metal barrier layer extends only to the uppermost surface, the left side surface, and the right side surface after said ion-implanted metal barrier layer is annealled.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 08/580,457Filed 26 Dec 1995
Granted: 4 Jul 2000
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10W 20/055
Of conductive barrier, adhesion or liner layers: by formation methods other than physical vapour deposition [PVD], chemical vapour deposition…
H10W 20/039
Covering conductive structures: also covering sidewalls of the conductive structures
H10W 20/057
By filling conductive material into holes, grooves or trenches: by selectively depositing, e.g. by using selective CVD or plating
H10W 20/063
Of conductive parts of the interconnections: by forming conductive members before forming protective insulating material