Semiconductor device having a catalyst enhanced crystallized layer

A semiconductor comprising:

• a crystalline semiconductor film comprising silicon and doped with hydrogen at a concentration not higher than 5 atomic %;
• wherein said semiconductor film contains a catalyst which is capable of promoting an amorphous silicon and a concentration of said catalyst in said crystalline semiconductor film does not exceed 1.times.10.sup.19 atoms/cm.sup.3.

A thin-film transistor comprising:

• a non-single crystalline semiconductor film comprising silicon formed on an insulating surface, said semiconductor film having a crystallinity and being doped with a catalyst metal;
• a gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween,
• wherein said metal is introduced into said semiconductor film for crystallization thereof and removed such that concentration of said material does not exceed 1.times.10.sup.19 atoms/cm.sup.3.

A semiconductor device comprising a crystalline semiconductor film including hydrogen, said crystalline semiconductor film comprising silicon and containing a catalyst material at a concentration not higher than 1.times.10.sup.19 atoms/cm.sup.3, wherein said catalyst material is capable of promoting crystallization of said semiconductor film.

A semiconductor device comprising a crystalline semiconductor film including hydrogen, said crystalline semiconductor film comprising silicon and containing a catalyst material at a concentration not higher than 1.times.10.sup.19 atoms/cm.sup.3, wherein said catalyst material is capable of promoting crystallization of said semiconductor film and wherein said semiconductor device is an N-channel type and said crystalline semiconductor film has a field effect mobility of 40 to 60 cm.sup.2 /Vs.

A semiconductor device comprising a crystalline semiconductor film including hydrogen, said crystalline semiconductor film comprising silicon and containing a catalyst material at a concentration not higher than 1.times.10.sup.19 atoms/cm.sup.3, wherein said catalyst material is capable of promoting crystallization of said semiconductor film and wherein said semiconductor device is an N-channel type and said crystalline semiconductor film has a field effect mobility of 30 to 50 cm.sup.2 /Vs.