Thermoelectric conversion component

A thermoelectric conversion component comprising:

• a plurality of p-type thermoelectric material elements and n-type thermoelectric material elements;
• a pair of substrates disposed in an opposing relation with respect each other so as to sandwich therebetween the p-type thermoelectric material elements and the n-type thermoelectric material elements;
• electrodes provided on respective inner surfaces of the substrates so that pairs of the p-type thermoelectric material elements and the n-type thermoelectric material elements form a pn junction;
• a temperature detecting component integrally formed on an inner surface of at least one of the substrates;
• an input/output electrode formed on the temperature detecting component;
• a second electrode for withdrawing an output of the temperature detecting component outside the thermoelectric conversion component, the second electrode being formed on the substrate opposite the substrate on which the temperature detecting component is formed;
• and
• a connecting element formed of an electrically conductive material for connecting the input/output electrode and the second electrode.

A thermoelectric conversion component comprising:

• a p-type thermoelectric material element and an n-type thermoelectric material element;
• a pair of substrates disposed in an opposing relation with respect each other so as to sandwich therebetween the p-type thermoelectric material element and the n-type thermoelectric material element;
• electrodes provided on respective inner surfaces of the substrates so that the p-type thermoelectric material element and the n-type thermoelectric material element form a pn junction;
• and
• a temperature detecting component having a thin film thermistor directly formed on an inner surface of at least one of the substrates.

A thermoelectric conversion component comprising:

• a p-type thermoelectric material element and an n-type thermoelectric material element;
• a pair of substrates disposed in an opposing relation with respect to each other so as to sandwich therebetween the p-type thermoelectric material element and the n-type thermoelectric material element;
• electrodes provided on respective inner surfaces of the substrates so that the p-type thermoelectric material element and the n-type thermoelectric material element form a pn junction;
• and
• a temperature detecting component integrally formed on an inner surface of at least one of the substrates;
• wherein the substrate on which the temperature detecting component is formed comprises a silicon substrate surface on which there is formed an insulating layer, and wherein the temperature detecting component comprises a doped region of the silicon substrate which detects temperature based on silicon semiconductor characteristics.