Rotating anode for a wafer processing chamber

A process chamber for processing a semiconductor wafer residing therein comprising:

• a support to support the semiconductor wafer when the semiconductor wafer is placed thereon;
• a hollow sleeve to provide a containment chamber to process the semiconductor wafer when the semiconductor wafer is engaged to said hollow sleeve to form an enclosing floor and electrolyte is introduced into said hollow sleeve;
• a first electrode coupled to reside within said hollow sleeve and made rotatable so that rotation or oscillation agitates the electrolyte for distribution;
• and
• a second electrode coupled to the semiconductor wafer to subject the semiconductor wafer and the electrolyte to an electric field generated by a potential difference between said first and second electrodes.

A method of processing a substrate material residing in a containment chamber comprising:

• placing the substrate material to be processed on a support;
• providing a hollow sleeve to form the containment chamber to contain a processing fluid for processing the material, the sleeve having an open end in which the support is engaged to the sleeve, such that the material forms an enclosing floor to retain the processing fluid therein;
• providing a first electrode within the hollow sleeve, in which the first electrode is made rotatable, so that rotation or oscillation agitates the processing fluid for distribution;
• providing a second electrode coupled to the material to subject the material and the processing fluid to an electric field, which field is generated by a potential difference between the first and second electrodes;
• filling the containment chamber with the processing fluid;
• applying a potential across the first and second electrodes;
• rotating or oscillating the first electrode for the processing fluid distribution.