Sample analyzing apparatus

A method for inspecting a sample on the basis of a secondary signal obtained by irradiating said sample with an energy beam by performing steps (13)-(15) and at least one of the remaining of steps (1)-(18), said steps comprising:

• (1) pre-aligning said sample;
• (2) storing a recipe for carrying out analysis of said sample;
• (3) reading a sample number formed on said sample;
• (4) reading the recipe based on the read sample number;
• (5) carrying out analysis based on the read recipe;
• (6) storing a reference image for alignment;
• (7) forming said reference image for alignment and carrying out alignment of said sample by comparing the reference image with the alignment pattern image of said sample;
• (8) preliminarily storing an analytic point map of said sample;
• (9) reading and indicating the registered analytic point map;
• (10) moving said sample according to a specification on the analytic point map or an instruction of the recipe so as to set the specified or instructed analytic point at a desired position;
• (11) storing a reference image of the specified or instructed analytic point;
• (12) forming a positioning image of the specified or instructed analytic point and positioning said analytic point by verifying the positioning image of the specified or instructed analytic point with a positioning reference image of said analytic point;
• (13) generating a spectrum by analyzing the positioned analytic point;
• (14) storing a library of reference spectra;
• (15) selecting a reference spectrum estimated to be the same as said generated spectrum;
• (16) displaying the reference spectrum estimated to be the same and said generated spectrum at the same time;
• (17) displaying the reference spectrum estimated to be the same and said generated spectrum so that they overlap each other;
• and
• (18) displaying and/or filing an analysis result of said analytic point and the selection result.

An apparatus for inspecting semiconductor devices on the basis of a secondary signal obtained by irradiating the devices with an energy beam comprising:

• means for generating a spectrum on the basis of said secondary signal;
• means for storing a plurality of reference spectra for identifying materials in said devices;
• means for displaying said generated spectrum and at least one reference spectrum;
• means for modifying said generated spectrum about height of spectrum and/or position of spectrum.

An apparatus for inspecting semiconductor devices on the basis of a secondary signal obtained by irradiating said devices with an energy beam comprising:

• means for generating a spectrum on the basis of said secondary signal;
• means for storing a plurality of reference spectra for identifying materials in said devices;
• means for inputting information relating to a manufacturing process;
• means for limiting the number of reference spectra on the basis of said input information;
• means for comparing said generated spectrum with the limited number of reference spectra.

An apparatus for inspecting semiconductor wafers on the basis of a secondary signal obtained by irradiating said semiconductor wafers with an energy beam comprising:

• means for displaying a map of said wafer and particles placed on said wafer;
• means for choosing said particles on said map;
• means for irradiating said energy beam on said chosen particles;
• means for detecting the secondary signal obtained by irradiating said chosen particles;
• means for generating a spectrum on the basis of said detected secondary signal;
• means for storing a plurality of reference spectra for identifying the materials of said particle;
• means for comparing said generated spectrum and said a plurality of reference spectra;
• means for selecting a reference spectrum estimated to be the same as said generated spectrum.

A method for inspecting semiconductor devices on the basis of a secondary signal obtained by irradiating said devices with an energy beam after the manufacturing process of said semiconductor devices comprising:

• (a) reading a recipe including data associated with analytical positions on said semiconductor devices;
• (b) positioning an irradiating point of said energy beam at one of said analytical positions;
• (c) detecting said secondary signal obtained on basis of irradiation of said energy beam;
• (d) repeating steps (a)-(c) for a plurality of analytical positions;
• (d) generating a spectrum on the basis of said secondary signal for each of a plurality of said analytical positions;
• (e) comparing said generated spectra and a preregistered plurality of reference spectra;
• (f) determining of what material a particle is made on the basis of a reference spectrum estimated to be the same as said generated spectrum.