Method for fabricating semiconductor thin film

A method for fabricating a semiconductor thin film comprising the steps of:

• providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film;
• obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment;
• forming a silicon nitride film in contact with said crystalline silicon film;
• forming an amorphous semiconductor film in contact with said silicon nitride film;
• dispersing by heat treatment the metal element in said crystalline silicon film into the amorphous semiconductor film formed in contact with said silicon nitride film;
• and
• removing the semiconductor film formed in contact with said silicon nitride film by using said silicon nitride film as an etching stopper.

A method for fabricating a semiconductor thin film comprising the steps of:

• providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film;
• obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment;
• forming a silicon nitride film in contact with said crystalline silicon film;
• forming an amorphous semiconductor film in contact with said silicon nitride film;
• crystallizing by heat treatment the amorphous semiconductor film which is formed in contact with said silicon nitride film;
• and
• removing the semiconductor film which is formed in contact with said silicon nitride film by using said silicon nitride film as an etching stopper.

A method for fabricating a semiconductor thin film comprising the steps of:

• providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film;
• crystallizing said amorphous semiconductor film by heat treatment to obtain a crystalline semiconductor film;
• forming a silicon nitride film in contact with said semiconductor film;
• forming a metal element diffusion film comprising a semiconductor in contact with said silicon nitride film;
• diffusing said metal element into said metal element diffusion film;
• and
• removing said metal element diffusion film into which said metal element has been diffused.