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US 6,066,562 AGranted
Method for fabricating silicon semiconductor discrete wafer
AssigneeNaoetsu Electronics Company
InventorsHisashi Ohshima, Tsutomu Satoh
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AssigneeNaoetsu Electronics Company
InventorsHisashi Ohshima, Tsutomu Satoh
Estimating the term…
A method of fabricating a silicon semiconductor discrete wafer is disclosed that assures excellent finishing accuracy and productivity. The method for fabricating a discrete wafer having a double-layer structure including an impurity diffused layer at one side and an impurity non-diffused layer at the opposite side includes cutting a wafer, having one of the impurity diffused layers formed on both surfaces of the silicon semiconductor wafer and having an oxide film formed on the surface of the diffused layer, into two pieces at the center of thickness with an ID saw slicing machine. Then, both surfaces of the cutting surface are ground to a predetermined thickness with a surface grinding machine, and the grinding surfaces are lapped with abrasive grains having a count of at least #2000 and no more than #6000. The processing surface is wet-etched as the final processing.
A method of fabricating silicon semiconductor discrete wafer of a double-layer structure, said method comprising:
A method of fabricating silicon semiconductor discrete wafer of a double-layer structure, said method comprising:
A method of fabricating a silicon semiconductor discrete wafer of a double-layer structure having an impurity diffused layer on one side of the silicon semiconductor wafer and an impurity non-diffused layer on the opposite side thereof, comprising slicing the silicon semiconductor wafer, on both sides of which an impurity diffused layer has been formed, into two pieces at the center of the wafer thickness, characterized in that the slicing of the wafer into two pieces is carried out after an oxide layer has been further formed on the diffused layers on both surfaces of the wafer;
A method of fabricating a silicon semiconductor discrete wafer of a double-layer structure having an impurity diffused layer on one side of the silicon semiconductor wafer and an impurity non-diffused layer on the opposite side thereof, comprising slicing the silicon semiconductor wafer, on both sides of which an impurity diffused layer has been formed, into two pieces at the center of the wafer thickness, characterized in that the slicing of the wafer into two pieces is carried out after an oxide layer has been further formed on the diffused layers on both surfaces of the wafer;
Dependencies are inferred from the claim text.