# US 6,063,442 A · Bonding of porous materials to other materials utilizing chemical vapor deposition

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- Number: US 6,063,442 A
- Document ID: US6063442A
- Status: Granted
- Kind: A
- Application number: 09/179,119
- Filed: 1998-10-26
- Granted: 2000-05-16
- Earliest claimed: 1998-10-26
- Assignees: Implex Corporation
- Inventors: Robert C. Cohen; Joseph R. Vargas
- Web page: https://patentgrep.com/patent/US6063442A

## CPC

- C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates}
- C23C 16/14: Deposition of only one other metal element
- C23C 16/4418: {Methods for making free-standing articles (C23C16/01 takes precedence)}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A process for bonding a porous material having an opened porous cellular structure to a substrate material, the process including the steps of: conditioning the substrate with tantalum in a reactor at 925.degree. C. having a tantalum source pot at 550.degree. C.; affixing the porous material to the conditioned substrate to form an affixed composite structure by clamping the porous material to the conditioned substrate; and, subjecting the composite structure to a chemical vapor deposition process (CVD) which uses tantalum as a source material for a time sufficient to CVD bond the porous material to the conditioned substrate material.

## Claims

### Claim 1

A process for bonding a porous material having an opened porous cellular structure to a substrate material, said process comprising the steps of:
conditioning said substrate with tantalum in a reactor at 925.degree. C. having a tantalum source pot at 550.degree. C.;
affixing said porous material to said conditioned substrate to form an affixed composite structure by clamping said porous material to said conditioned substrate; and,
subjecting said composite structure to a chemical vapor deposition process (CVD) which uses tantalum as a source material for a time sufficient to CVD bond said porous material to said conditioned substrate material.

### Claim 2 (depends on 1)

The process according to claim 1 wherein said porous material is a metallic porous cellular structure material containing tantalum.

### Claim 3 (depends on 1)

The process according to claim 1 wherein said substrate is titanium.

### Claim 4 (depends on 1)

The process according to claim 1 wherein said substrate is CoCrMo.

### Claim 5 (depends on 1)

The process according to claim 1 wherein said reactor uses argon, chlorine and hydrogen gases during said conditioning.

### Claim 6 (depends on 1)

The process according to claim 1, further comprising the step of CVD densifying said porous material prior to CVD bonding it to said substrate.

### Claim 7 (depends on 6)

The process according to claim 6 wherein said step of CVD densification includes placing said porous material in a reactor housing a tantalum source and using argon, chlorine and hydrogen gases.

### Claim 8 (depends on 7)

The process according to claim 7 wherein the temperature of said reactor is 900.degree. C.

### Claim 9 (depends on 8)

The process according to claim 8 wherein gas settings of said reactor are 1000 ccm Ar, 900 ccm Cl.sub.2 and 1800 ccm H.sub.2.

### Claim 10 (depends on 1)

The process according to claim 1 wherein said chemical vapor deposition for bonding includes;
placing said composite structure in a reactor having a tantalum source pot and using argon, chlorine and hydrogen gases for a time sufficient to bond said porous material to said conditioned substrate material.

### Claim 11 (depends on 10)

The process according to claim 10 wherein said reactor is a quartz reactor at a temperature of about 925.degree. C. with said source pot at about 550.degree. C.