Chemical mechanical polishing slurry useful for copper/tantalum substrate
AssigneeCabot Corporation
InventorsVlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
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Abstract
The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.
Claims34
A chemical mechanical polishing slurry precursor comprising:
- at least one abrasive;
- at least one organic amino compound selected from long chain alkylamines, alcoholamines and mixtures thereof;
- and
- at least one complexing agent.
A chemical mechanical polishing slurry comprising:
- at least one abrasive;
- at least one oxidizing agent;
- and
- at least one organic amino compound selected from long chain alkylamines, alcoholamines and mixtures thereof.
A chemical mechanical polishing slurry comprising:
- alumina;
- at least one oxidizing agent;
- tartaric acid;
- benzotriazole;
- and
- at least one organic amino compound selected from long chain alkylamines, alcoholamines, and mixtures thereof.
A chemical mechanical polishing slurry comprising:
- from about 0.5 to about 15 wt % alumina;
- from about 0.5 to about 5 wt % tartaric acid;
- from about 0.01 to about 0.2 wt % benzotriazole;
- from about 0.005 to about 10.0 wt % of an organic amino compound selected from dodecylamine, triethanolamine, and mixtures thereof;
- and
- an oxidizing agent comprising the admixture of from about 1 to about 20 wt % urea and from about 1 to about 12.0 wt % hydrogen peroxide wherein the chemical mechanical polishing slurry has a pH of from about 4 to about 8 and a Cu:Ta polishing selectivity ratio greater than 10.
Dependencies are inferred from the claim text.