Quantum magnetic memory
AssigneeIntel Corporation
InventorEric C. Hannah
Life of this patent
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Abstract
A system for storing data on a magnetic medium using spin polarized electron beams is provided. The system includes a source of spin polarized electrons and a storage medium disposed a selected distance from the source. The storage medium has a plurality of storage locations, each of which includes a layer of a first non-magnetic material, a layer of magnetic material deposited on the first non-magnetic material, and layer of a second non-magnetic material deposited on the magnetic material. The second material is included to scatter spin polarized electrons from the source into an interaction volume of the magnetic material. An electron optics system directs the source of spin polarized electrons to one of the plurality of storage locations.
Claims21
A system for storing data comprising:
- a source of spin-polarized electrons;
- and
- a medium to interact with the spin-polarized electrons, the medium including a layer of non-magnetic material and a layer of magnetic material deposited on the layer of non-magnetic material, the layer of magnetic material being modified to enhance interactions with the spin-polarized electrons.
A storage medium comprising:
- a layer of a first conductive material;
- a layer of magnetic material adjacent to the layer of the first material;
- and
- a layer of a third material adjacent to the layer of magnetic material, the layer of the third material having a thickness designed to increase lateral scattering of spin polarized electrons incident on the medium.
A system for storing data comprising:
- a source of spin polarized electrons;
- a storage medium disposed a selected distance from the source and having a plurality of storage locations, each storage location including a layer of a first non-magnetic material, a layer of magnetic material deposited on the first non-magnetic material, and layer of a second non-magnetic material deposited on the magnetic material, the second material to scatter spin polarized electrons from the source into an interaction volume of the magnetic material;
- and
- electron optics to direct the source of spin polarized electrons to one of the plurality of storage locations.
Dependencies are inferred from the claim text.