Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsNaoharu Sugiyama, Tsutomu Tezuka, Riichi Katoh, Atsushi Kurobe, Tetsufumi Tanamoto
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Abstract
The semiconductor device comprises a first insulating layer formed on the semiconductor substrate, at least one double-deck semiconductor nanocrystal formed on the first insulating layer, the at least one double-deck semiconductor nanocrystal comprising a first semiconductor nanocrystal and a second semiconductor nanocrystal stacked one upon the other via a second insulating layer, and a third insulating layer selectively formed on the first insulating layer so as to cover the at least one double-deck semiconductor nanocrystal.
Claims13
A semiconductor device comprising:
- a semiconductor substrate having a region for forming a current channel;
- a first insulating layer formed on the semiconductor substrate;
- a plurality of double-deck semiconductor nanocrystals formed on the first insulating layer, each of the double-deck semiconductor nanocrystals comprising a first semiconductor nanocrystal and a second semiconductor nanocrystal stacked upon the first semiconductor nanocrystal with a second insulating layer interposed therebetween;
- and
- a third insulating layer selectively formed on the first insulation layer so as to cover the plurality of double-deck semiconductor nanocrystals,
- wherein the second semiconductor nanocrystal has a semispherical surface, and the plurality of double-deck nanocrystals have a same height.
A semiconductor device comprising:
- a semiconductor substrate having a region for forming a current channel;
- a first gate insulating film in a predetermined region on the semiconductor substrate;
- a plurality of semiconductor nanostructures of 50 nm or less in diameter, formed on the first gate insulating film and having a same height;
- a second gate insulating film formed on the first gate insulating film, the plurality of semiconductor nanostructures being embedded in said second gate insulating film;
- a gate electrode formed on the second gate insulating film;
- and
- a pair of doped layers formed along the gate electrode in the semiconductor substrate with the gate electrode sandwiched therebetween,
- wherein each of the plurality of semiconductor nanostructures comprises at least two semiconductor nanocrystals which are stacked upon one another with an interlayer insulating film interposed therebetween, and
- a thinner one of the first gate insulating film and a portion of the second gate insulating film located between an uppermost surface of an uppermost one of the at least two semiconductor nanocrystals and the gate electrode has a thickness larger than four times a thickness of the interlayer insulating film of each of the nanostructures.
Dependencies are inferred from the claim text.