Multi-layer, mirror of compound semiconductors including nitrogen and surface light-emitting device with the same
AssigneeCanon Kabushiki Kaisha
InventorMamoru Uchida
Life of this patent
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Abstract
A surface light-emitting device includes an active layer and a set of reflectors. The reflectors are arranged on both opposite sides of the active layer such that light can be emitted in a direction perpendicular to the active layer. At least a portion of the reflectors includes a plurality of layers of compound semiconductors at least one of which includes nitrogen. Current is injected into the active layer, and the intensity of the light emitted from the surface light-emitting device is changed by the current modulated in accordance with a signal to be transmitted. At least one of the layers of compound semiconductors may also include aluminum.
Claims23
A multi-layer mirror comprising:
- a plurality of layers of compound semiconductors,
- wherein said plurality of layers of compound semiconductors comprise a plurality of sets of paired layers,
- wherein each said set of paired layers comprises a semiconductor layer including no nitrogen and a semiconductor layer including nitrogen, and
- wherein the semiconductor layer including no nitrogen and the semiconductor layer including nitrogen are, respectively:
- (a) InP and GaInNAsP;
- (b) GaAs and GaInNAsP;
- (c) AlAs and GaInNAsP;
- or
- (d) AlGaAs and GaInNAsP.
A multi-layer mirror comprising:
- a plurality of layers of compound semiconductors,
- wherein said plurality of layers of compound semiconductors comprise a plurality of sets of paired layers,
- wherein each said set of paired layers comprises a semiconductor layer including no nitrogen and a semiconductor layer including nitrogen, and
- wherein the semiconductor layer including no nitrogen and the semiconductor layer including nitrogen are, respectively:
- (a) InP and GaNSb;
- or
- (b) AlGaAs and GaInNAs.
A surface light-emitting device comprising:
- an active layer;
- and
- a set of reflectors, said reflectors being arranged on both opposite sides of said active layer such that light can be emitted in a direction perpendicular to said active layer, and at least a portion of said reflectors comprising a plurality of layers of compound semiconductors,
- wherein said plurality of layers of compound semiconductors comprise a plurality of sets of paired layers,
- wherein each said set of paired layers comprises a semiconductor layer including no nitrogen and a semiconductor layer including nitrogen, and
- wherein the semiconductor layer including no nitrogen and the semiconductor layer including nitrogen are, respectively:
- (a) InP and GaInNAsP;
- (b) GaAs and GaInNAsP;
- (c) AlAs and GaInNAsP;
- (d) AlGaAs and GaInNAsP;
- (e) InP and GaNSb;
- or
- (f) AlGaAs and GaInNAs.
Dependencies are inferred from the claim text.